Modeling of CVD of SiC

For modeling of CVD of SiC, STR offers VR™ CVD SiC software that is recommended for quick generation and analysis of trends in 2D approximation and CVDSim3D for detailed 3D modeling of reactors and recipe tuning. Both software tools can be used to for modeling of temperature distribution, flow, gas phase reactions including secondary phase formation, parasitic deposition, epitaxy and doping. The applications include optimization of the the growth rate and uniformity, growth efficiency in terms of precursor utilization, uniformity of doping, mitigation of parasitic deposition. Software can also be used for process scale up and transfer.

VR CVD SiC includes the following readily available chemical models:

• Epitaxial and bulk growth of SiC by CVD
  • From C₃H₈ and SiH₄ with account of generation of Si particles
    • in Cl-free atmosphere
    • with addition of HCl
  • From C₃H₈ and SiCl₄
  • From C₃H₈ and TCS
  • From C₂H₄ and TCS
  • From C₃H₈ and DCS
  • From MTS (CH₃SiCl₃) or MS (H₃SiCH₃)
• Doping:
  • Aluminum doping using TMAl
  • Nitrogen doping using N₂ or NH₃
  • Aluminum and nitrogen co-doping
• Deposits analysis (SiC,  SiC-C, SiC-Si, C and Si)
• Bulk growth by HTCVD (High-Temperature CVD)
  • Growth of SiC from C₃H₈ and SiH₄ with account for generation and re-evaporation of SiC particles.

For different precursors, please ask us directly. The software is constantly developing and some models can already be available or might be added.