CGSim 26.1 has been released
The latest CGSim 26.1 update brings significant advancements for modeling of dopant transport: faster and more accurate simulation of axial dopant uniformity in Cz Si, account for phosphorus and boron incorporation in the silicon melt from gas-phase species, analysis of dopant contribution from feedstock in CCz. Also, criterion for probability of twin crystal formation in GaAs and InP growth has been introduced.
VR Nitride Edition 2025.2 has been released
The new release expands the software’s capabilities to address the influence of MOCVD process recipe on the electrical properties of GaN layer through point defects. It also introduces enhanced tools for defining process parameters in widely used planetary reactors, making recipe specification more intuitive and fault-tolerant.
STR at ISCSI-X & ICSI/ISTDM 2025 — Yokohama, Japan
STR will participate in the ISCSI-X & ICSI/ISTDM 2025 conference in Yokohama, Japan, November 10–13, 2025. We will present works on selectivity and conformality of lateral Si/SiGe stack etching and on 200 mm Ge epitaxy in a horizontal flow reactor. We will also have an exhibit booth.
CS ManTech 2025
On May 19 – 22, we will be in New Orleans, participating in CS ManTech 2025. Visit us at booth 709 for live demonstration of modeling software.
Upcoming Conferences
STR team will participate in the following conferences:
April 7-9, CS International, Brussels, Belgium
May 11-15, NDNC 2025, Oita, Japan
May 19-22, CS ManTech, New Orleans, USA
June 22-25, ALD 2025 and ALE 2025, Jeju Island, Korea
July 6-11, ICNS-15, Malmö, Sweden
July 13-18, ACCGE-24 and OMVPE-22, Stevenson, Washington, USA
August 3-8, ICCGE-21, Xi’an, China
August 31 – September 1, ICDCM 2025, Glasgow, UK
September 14-19, ICSCRM 2025, Busan, Korea
SiLENSe 2024.1 has been released
SiLENSe version 2024.1 has been released. The new version uses k∙p model for description of non-parabolic dependence of hole energy on the wave vector. In addition, angular emission pattern of TE and TM photons is predicted basing on the energy-dependent interband matrix element.
Hasselt Diamond Workshop
On March 19-31, 2025, STR will participate in the 29th Hasselt Diamond Workshop – SBDD XXIX, that will take place in Hasselt, Belgium. We will have a booth at the exhibition and present two works: “Improved Uniformity of Diamond Growth Through the Modeling of MPCVD on the Large Area Substrates” by STR Belgrade team and “Roles of gas-phase and surface kinetics of CxHy in diamond CVD” in collaboration with Michigan State University and Fraunhofer USA.
ISMCG 1 / IWMCG 11
On September 19-25, 2024, STR will participate in The 1st International School on Modelling in Crystal Growth (ISMCG 1) followed by The 11th International Workshop on Modelling in Crystal Growth (IWMCG 11) that will take place in Timisoara, Romania. Practical session on simulation of Czochralski growth of Si crystals with CGSim software will be conducted by STR team during ISMCG.
Upcoming Conferences
From May to November 2024, STR will participate in the following conferences:
May 12-17, ICMOVPE XXI, Las Vegas, NV, USA
May 20-23, CS ManTech, Tucson, Arizona, USA
May 26-31, IWGO, Berlin, Germany
June 24-26, CGCT-9, Seoul, Republic of Korea
August 4-7, ALD 2024 + ALE 2024, Helsinki, Finland
September 1-5, 34th ICDCM, Dresden, Germany
September 29 – October 4, ICSCRM-2024, Raleigh, NC, USA
October 6-11, PRiME 2024, Honolulu, HI, USA
November 3-8, 12th IWN, Honolulu, HI, USA
Conference on Si and SiGe
STR will participate in The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research, and will be held in Como, Italy, on May 21-25, 2023. We will present our recent results in the report “Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales”
CGSim Update
1. CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li. The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture.
2. “Application of computer modeling to pulling rate and productivity of Czochralski pullers in PV Si crystal growth” (Li, Smirnov, JCG, Volume 611, 2023, 127178) is temporarily available for free download.
CS International
STR will have a booth at CS International Conference on April 18-19. The conference will be held in Brussels, Belgium, in The Sheraton Brussels Airport Hotel, conveniently located just 39 steps away from the arrivals and departures hall. Do not miss the opportunity to meet in person, stop by at the booth or schedule a meeting.
Tunnel Junctions in SiLENSe 6.5
SiLENSe version 6.5 has been released. New version supports simulation of heterostructures including tunnel junctions. Tunnel junctions can be used to connect different cascades of LED/LD structures or enable replacing p-contact by combination of TJ and n-contact.
New option for PVT SiC
VR software for simulation of PVT SiC can now be used to estimate the expected wafer warpage for different positions of the slice in SiC boule. The model is based on the plastic strain inherited by the wafer from the crystal, which results in the wafer deformation after cutting.
PolySim and PolySim 3D version 2022.10 have been released
PolySim and PolySim 3D version 2022.10 have been released. The main new features are:
– Better integration between PolySim and PolySim3D.
– Popcorn simulation is introduced in PolySim3D. The user can find and analyze the popcorn locations on the rod surfaces and make optimizations to reduce popcorn in the most problematic spots.
IWCGT-8
STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany on May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.
CGSim 22.0 has been released
Features include added chemical model of the phosphorus evaporation from Si melt,
improved chemical model of nitrogen evaporation from Si melt, 3-D modeling of the gas bubbles formation and transport in Cz Si, new STR-k turbulence model for RANS modeling.
PL in SiLENSe 6.4
SiLENSe version 6.4 has been released. Simulation of PL is updated in such a way that generated carriers are included into the main drift-diffusion computations. As users can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells.
SSLCHINA and IFWS
On December 6-8, 2021, STR has participated in SSL China and IFWS forum in Shenzhen, China. STR-China presented a talk “Scaling and optimization of chip design of mini- and micro-LEDs”
Electrical-thermal-optical simulations of AlGaInP-based LEDs
New open access paper by STR: “Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations” by O. Fedorova, K. Bulashevich, and S. Karpov. All results are obtained with SimuLED.
ACCGE-22 and OMVPE-20
STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.