Scheduled Events
2025 Invited Lecture
“Impact of Radiation Effects on Satellite Electronics”
In the unforgiving space environment, radiation effects frequently dictate the fate of satellite components and systems. This talk offers a high-level overview of key radiation effects, specifically focusing on total ionizing dose (TID) and single-event effects (SEEs). We quickly review the harsh space environment, detailing the two primary radiation sources—galactic cosmic rays (GCRs) and solar energetic particles (SEPs)—and how they are modulated by geomagnetic fields, orbital mechanics, and mission parameters. Finally, we analyze documented real-world examples of radiation-induced failures in satellite electronics and provide actionable advice to enhance mission reliability.
DATE / TIME / LOCATION: July 9, 2025, 8:30 – 12:00, session will include TID demonstration using X-ray irradiation of Cubesats.
UTD Satellite Workshop, University of Texas at Dallas
https://satworkshop.syssec.org/
Top(L): Students assembling and testing their cubesats. Top(C): Two cubesats in the x-ray machine ready to receive a dose. Top (R): Cubesat on left was shielded by 1.5cm of stainless steel while the one on the right was unshielded (both were biased and operating during the exposure). After 30krad(Si) the unshielded cubesat failed to turn on. Bottom: Group photo of 2025 workshop participants in from of ROW labs (Center for Harsh Environment Semiconductors and Systems [CHESS]). Assistant Professor, CS Kangkook Jee (leftmost), Department head, CS, and Professor, Ovidiu Daescu (3rd from right back row), and Director, radiation effects and reliability at CHESS, and Research Scientist Robert Baumann.
2025 Poster Presentation (NSREC)
“Assessing Charge Generation of Heavy Ions vs. Two-Photon Absorption in Silicon PN Diodes”
This study elucidates the charge generation mechanisms within silicon PN diodes subjected to heavy ion bombardment and two-photon absorption (TPA). A dedicated experimental apparatus, incorporating a precision pulsed laser source, beam delivery optics, and automated single event effect (SEE) detection module, was employed to analyze the response of a PIN silicon diode under controlled ion and photon irradiation. A robust correlation between collected charge and linear energy transfer (LET) was observed across a range of ion species and laser pulse energies, establishing TPA as a viable alternative to conventional heavy ion testing for semiconductor device evaluation. This alternative approach offers potential advantages in accessibility and cost-effectiveness. Primary author Dr. Rodolfo Rodriguez-Davila.