Photoluminescence (PL) mapping provides spatial information on optical emission properties such as intensity, peak wavelength, and spectral distribution. These parameters are closely related to bandgap, composition, doping, and defect-related recombination processes. PL mapping is widely used for LEDs and laser diodes, where emission wavelength uniformity, optical efficiency, and defect density directly impact device performance and yield. For InP-based photonic devices, PL mapping supports the evaluation of material quality and compositional uniformity relevant for optical gain and absorption. In GaN HEMT structures, PL mapping is particularly relevant for D-mode devices, where it provides access to the barrier composition as well as insight into buffer and channel quality, impurity-related recombination, and spatial variations affecting device reliability and performance.

Reflectance mapping measures the spectral reflectivity across the wafer surface. Analysis of the spectral reflectance provides information on layer thicknesses, composition, and interface quality. Optical model-based analysis enables obtaining the same also for complex epitaxial stacks. Spatial variations in these properties support uniformity monitoring and process window control. In GaN HEMT production, UV reflectance mapping provides access to barrier thickness and composition as well as cap/p-GaN thickness for both E-mode and D-mode devices.

Thickness mapping determines the spatial distribution of the layer or total epitaxial stack thickness using optical interference effects. Thickness maps reveal growth non-uniformities, edge effects, and systematic trends across the wafer, supporting improved epitaxial control and reproducibility.

Bow mapping measures wafer curvature and mechanical deformation across the wafer surface. The resulting bow data provide insight into stress, strain, and mechanical stability of the wafer. Wafer bow is a critical parameter for wafer handling, lithography compatibility, and downstream process stability.

We look forward to hearing from you and will try to answer your questions or respond to your message as best we can. Please use one of the following contact options.