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Prodotti recenti

New generation of TSV-enabled SiPM technologies for medical imaging and industrial applications

2.5D and 3D integration enable high-density, low-latency interconnects by routing signals vertically through the highly doped silicon bulk using Through-Silicon Vias (TSVs). These technologies support FBK’s development of TSVs, micro TSVs, and Backside-Illuminated SiPMs, enabling compact architectures with high segmentation while preserving the NUV-HD sensors’ electro-optical and timing performance. TSVs will ensure a very compact SiPM packaging when arranged in arrays and will allow achi...

Localized fabrication and integration of color centers in diamond by FIB

Color centers (CCs) of group IV elements coupled to vacancies in diamond are emerging as robust solid‐state single-photon sources with exceptional optical and spin properties, making them highly attractive for quantum technology applications. At Fondazione Bruno Kessler, we have developed a comprehensive fabrication platform that enables the precise creation and integration of Group-IV defect centers, particularly silicon-vacancy (SiV) and germanium-vacancy (GeV) centers, with formation yield...

Overcoming fabrication challanges of color centers in diamond with a focused ion beam

Defects in diamonds such as nitrogen-vacancy (NV), silicon-vacancy (SiV), and germanium-vacancy (GeV) color centers have become extremely important in quantum sensing, quantum communication, and quantum computing technologies, for their remarkable optical and spin properties. This work is focused on the deterministic color center fabrication technique based on ion implantation using a FIB system with a Liquid Metal Alloy Ion Source (LMAIS). This method enables the accurate implantation of sev...

Development and production of advanced 3D pixel sensors at FBK

The increase in luminosity at the HL-LHC has led to the need for both increased radiation resistance in particle sensors, along with the need for timing capabilities, and lastly, to an increase in the granularity of vertex detectors. 3D detectors have an inherent good resistance to radiation damage that have allowed, after several years of R&D, to push their radiation hardness up to the maximum fluences of interest for HL-LHC (~2×1016 neq/cm2). In recent years, FBK has introduced several ...

Back-side-illuminated Silicon photomultipliers for improved radiation hardness

Silicon Photomultipliers (SiPMs) are single-photon sensitive detectors that continue to attract increasing interest in several industrial and scientific applications that require fast detection speed, high sensitivity, compactness, insensitivity to magnetic fields and low bias voltages. In particular, the SiPMs are used in high-energy physics (HEP) experiments, and for the readout of scintillators in gamma-ray detectors for space experiments. In such applications they receive a significan...

Prodotti più scaricati
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