unique technology
unique technology
of quantum dots
Vertically integrated
Vertically integrated
production facility from epitaxy to packaging
Endless flexibility
Endless flexibility
of customized demands even for low volumes
Widest range
Widest range
of existing category line
20+ years of experience
20+ years of experience
in Photonic R&D and production
Made in Germany
Made in Germany
in the high-tech center of Dortmund
new products
Booster optical amplifier at 1310nm in BTF package
Booster optical amplifier at 1310nm in BTF package
BOA1310070YY300MXXXX
PDF
Gain mean wavelength:  1310 nm
Gain bandwith (3dB):  70 nm
Output power:  300 mW
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Booster optical amplifier at 1260nm in BTF package
Booster optical amplifier at 1260nm in BTF package
BOA1260050YY400MXXXX
PDF
Gain mean wavelength:  1260 nm
Gain bandwith (3dB):  50 nm
Output power:  400 mW
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Fiber coupled DFB laser diode at 780nm with 10mW
Fiber coupled DFB laser diode at 780nm with 10mW
DFB0780000YY010MFXXX
PDF
Peak wavelength:  780 nm
Output power:  10 mW
Forward current:  100 mA
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DFB laser diode at 1310 nm with 70mW - Bare die, wide temperature range
DFB laser diode at 1310 nm with 70mW - Bare die, wide temperature range
DFA1310000DI070MXXXX
PDF
Peak wavelength:  1310 nm
Output power:  70 mW
Forward current:  200 mA
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Fiber coupled DFB laser diode at 1310nm with 300mW
Fiber coupled DFB laser diode at 1310nm with 300mW
DFB1310000YY300MFXXX
PDF
Peak wavelength:  1310 nm
Output power:  300 mW
Forward current:  1500 mA
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Gain-chip at 850nm in TO package
Gain-chip at 850nm in TO package
GCB0850030TC050MXXXX
PDF
Wavelength:  850 nm
Tuning range width:  30 nm
Maximal Output Power:  50 mW
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Semiconductor optical amplifier at 1310nm in BTF package
Semiconductor optical amplifier at 1310nm in BTF package
SOA1310025YY12DBXXXX
PDF
Wavelength:  1310 nm
Gain bandwith (3dB):  25 nm
Small signal gain:  12 dB
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INNOLUME HISTORY

Selected milestones in our history
2003
Founded as a spin-off of Ioffe Institute and the Institute of Solid State Physics at TU Berlin based on the long-standing collaboration between the laboratories of Prof Zhores Alferov (Nobel Prize in Physics 2000) and Prof Dieter Bimberg (UNESCO Award 2006)
2004
Established production MBE of QD wafers. First sales and NRE projects.
2005
Development of O-band QD passive mode-locked lasers with world-record performance
2006
Invention of O-band QD based comb-laser
2007
Finalized the ramp up of laser production faciltiies: from epi to fiber pigtailed modules
2008
Launch production of high power FP lasers based on QDs and QWs
2009
Launch production of high power FBG laser modules
2012
Development of DFB GaAs lasers based on QDs and QWs. Launch production
2013
Invention of FBG-lasers for the second harmonic generation.
2015
Launch production of O-band QD lasers with record PCE above 45%
2017
Products portfolio expanding
2019
Invention of high power high temperature O-band DFB QD lasers (Prizm Award 2020)
2020
Invention of high power O-band SOAs for LiDAR applications
2021
Launch production of high power 1.2um FP lasers for BDFA pumping
2022
Development of ultra-low noise comb-SOA based on QDs
2024
Launch of a major CapEx program to further expand our production capacity and enhance development capabilities
2025
Award for high saturation power O-band semiconductor optical amplifier in optical information, communication, and security applications (Innovation Award, Laser World of Photonics / Europa Science).