Abstract
In this work, we present high-performance SiN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate for low-voltage application. Attributed to n+-InGaN regrown ohmic contacts, the devices show low on-resistance of 0.6 Ω·mm and knee voltage of 1.2 V. Low pressure chemical vapor deposition SiN was used as a passivation to withstand the high temperature when SiN gate dielectric was deposited by plasma enhanced atomic layer deposition. The devices with the source-drain spacing of 0.9 µm demonstrate low leakage current with the high on/off current ratio of 5 × 107, breakdown voltage of 52 V, and low current collapse at 30 V drain quiescent condition of 3.5%. Due to the use of 7-nm thin-barrier AlGaN, the devices with a 250-nm gate length have gradely frequency characteristics with a peak transconductance of 597 mS/mm and a cut-off frequency/maximum oscillation frequency (fT/fmax) of 43/120 GHz. S-band continuous wave large signal measurements yield a high PAE over 70% at low voltages of 6 and 9 V. The devices show a maximum output power of 1.73 W/mm and power gain of 19.1 dB at Vds = 9 V. These excellent performances reveal the great potential of the SiN/AlGaN/GaN MIS-HEMTs in low-voltage RF applications.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Hao Y, Yang L, Ma X, et al. High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency. IEEE Electron Device Lett, 2011, 32: 626–628
Zhang H C, Sun Y, Hu K P, et al. Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci China Inf Sci, 2023, 66: 182405
Mishra U K, Shen Likun U K, Kazior T E, et al. GaN-based RF power devices and amplifiers. Proc IEEE, 2008, 96: 287–305
Wu Y F, Moore M, Saxler A, et al. 40-W/mm double field-plated GaN HEMTs. In: Proceedings of the 64th Device Research Conference, State College, 2006
Saito W, Nitta T, Kakiuchi Y, et al. On-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage. IEEE Electron Device Lett, 2007, 28: 676–678
Akira K, Asano T, Tokuda H, et al. High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates. In: Proceedings of the International Meeting for Future of Electron Devices, Suita, 2013
Ohara S, Yamada H, Iwai T, et al. InGaP/GaAs power HBTs with a low bias voltage. In: Proceedings of the International Electron Devices Meeting (IEDM), Washington, 1995
Chen S H, Chang L, Chang E Y, et al. High power Al0.3Ga0.7As/In0.2Ga0.8 as enhancement-mode PHEMT for low-voltage wireless communication systems. Electron Lett, 2002, 38: 1063–1064
Then H W, Radosavljevic M, Jun K, et al. Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration. IEEE Trans Electron Device, 2020, 67: 5306–5314
Then H W, Dasgupta S, Radosavljevic M, et al. 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications. In: Proceedings of the International Electron Devices Meeting (IEDM), San Francisco, 2019
Zheng Z, Song W, Lei J, et al. GaN HEMT with convergent channel for low intrinsic knee voltage. IEEE Electron Device Lett, 2020, 41: 1304–1307
Then H W, Chow L A, Dasgupta S, et al. High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs. In: Proceedings of the Symposium on VLSI Technology (VLSI Technology), Kyoto, 2015
Zhang S, Liu X, Wei K, et al. Suppression of gate leakage current in Ka-band AlGaN/GaN HEMT with 5-nm SiN gate dielectric grown by plasma-enhanced ALD. IEEE Trans Electron Dev, 2021, 68: 49–52
Srikanth K, Kushwah B, Dutta G, et al. AlInN/GaN MIS-HEMTs with high pressure oxidized aluminium as gate dielectric. In: Proceedings of the International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bangalore, 2018
Liu S, Zhu J, Guo J, et al. Improved breakdown voltage and low damage E-mode operation of AlON/AlN/GaN HEMTs using plasma oxidation treatment. IEEE Electron Device Lett, 2022, 43: 1621–1624
Denninghoff D J, Dasgupta S, Lu J, et al. Design of high-aspect-ratio T-gates on N-polar GaN/AlGaN MIS-HEMTs for high fmax. IEEE Electron Device Lett, 2012, 33: 785–787
Tang Y, Shinohara K, Regan D, et al. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz. IEEE Electron Device Lett, 2015, 36: 549–551
Recht F, McCarthy L, Rajan S, et al. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature. IEEE Electron Device Lett, 2006, 27: 205–207
Zimmermann T, Deen D, Cao Y, et al. AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance. IEEE Electron Device Lett, 2008, 29: 661–664
Yue Y, Hu Z, Guo J, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz. IEEE Electron Device Lett, 2012, 33: 988–990
Mounika B, Ajayan J, Bhattacharya S, et al. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: a critical review. Micro Nanostruct, 2022, 168: 207317
Ajayan J, Nirmal D, Mohankumar P, et al. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: a critical review. Mater Sci Semiconductor Process, 2022, 151: 106982
Binari S C, Klein P B, Kazior T E. Trapping effects in GaN and SiC microwave FETs. Proc IEEE, 2002, 90: 1048–1058
Ranjan K, Arulkumaran S, Ng G I, et al. Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond. IEEE J Electron Device Soc, 2019, 7: 1264–1269
Soni A, Ajay A, Shrivastava M. Novel drain-connected field plate GaN HEMT designs for improved VBD-RON tradeoff and RF PA performance. IEEE Trans Electron Device, 2020, 67: 1718–1725
Gustafsson S, Jr-Tai Chen S, Bergsten J, et al. Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer. IEEE Trans Electron Device, 2015, 62: 2162–2169
Liu Z, Xie H, Lee K H, et al. GaN HEMTs with breakdown voltage of 2200 V realized on a 200 mm GaN-on-insulator (GNOI)-on-Si wafer. In: Proceedings of the Symposium on VLSI Technology (VLSI Technology), 2019
Xing W, Liu Z, Qiu H, et al. Planar-nanostrip-channel InAlN/GaN HEMTs on Si with improved gm and fT linearity. IEEE Electron Device Lett, 2017, 38: 619–622
Altuntas P, Lecourt F, Cutivet A, et al. Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate. IEEE Electron Device Lett, 2015, 36: 303–305
de Jaeger B, van Hove M, Wellekens D, et al. Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Bruges, 2012
Parvais B, Alian A, Peralagu U, et al. GaN-on-Si Mm-wave RF devices integrated in a 200mm CMOS compatible 3-level Cu BEOL. In: Proceedings of the International Electron Devices Meeting (IEDM), San Francisco, 2020
Kotani J, Yaita J, Homma K, et al. 24.4 W/mm X-band GaN HEMTs on AlN substrates with the LPCVD-Grown high-breakdown-field SiNx layer. IEEE J Electron Device Soc, 2023, 11: 101–106
Shi Y, Huang S, Bao Q, et al. Normally OFF GaN-on-Si MIS-HEMTs fabricated with LPCVD-SiNx passivation and high-temperature gate recess. IEEE Trans Electron Device, 2016, 63: 614–619
Chumbes E M, Shealy J R, Schremer A T, et al. AlGaN/GaN high electron mobility transistors on Si(111) substrates. IEEE Trans Electron Device, 2001, 48: 420–426
Liu H Y, Lee C S, Hsu W C, et al. Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si substrate by ozone water oxidation method. IEEE Trans Electron Device, 2013, 60: 2231–2237
Bose A, Biswas D, Hishiki S, et al. A temperature stable amplifier characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si. IEEE Access, 2021, 9: 57046–57053
Cheng Y, Ng Y H, Zheng Z, et al. RF enhancement-mode p-GaN gate HEMT on 200 mm-Si substrates. IEEE Electron Device Lett, 2023, 44: 29–31
Lu H, Hou B, Yang L, et al. High RF performance GaN-on-Si HEMTs with passivation implanted termination. IEEE Electron Device Lett, 2022, 43: 188–191
Xie H, Liu Z, Hu W, et al. GaN-on-Si HEMTs fabricated with Si CMOS-compatible metallization for power amplifiers in low-power mobile SoCs. IEEE Microw Wireless Compon Lett, 2021, 31: 141–144
Xie H, Liu Z, Hu W, et al. CMOS-compatible InAlN/GaN HEMTs on silicon for RF power amplifiers in 5G mobile SoCs. In: Proceedings of the MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2021: 397–399
Xie H, Liu Z, Hu W, et al. AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs. Appl Phys Express, 2022, 15: 016503
Gao G, Liu Z, Hao L, et al. E-mode AlN/GaN HEMTs on Si with 80.4% PAE at 3.6 GHz for low-supply-voltage RF power applications. IEEE Electron Device Lett, 2025, 46: 40–43
Acknowledgements
This work was supported in part by Fundamental Research Funds for the Central Universities (Grant No. YJSJ25013) and National Natural Science Foundation of China (Grant Nos. 62188102, 62174125, 62131014)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, M., Zhu, J., Zhang, S. et al. High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts. Sci. China Inf. Sci. 68, 202402 (2025). https://doi.org/10.1007/s11432-024-4460-y
Received:
Revised:
Accepted:
Published:
Version of record:
DOI: https://doi.org/10.1007/s11432-024-4460-y