This is a preview of subscription content, log in via an institution to check access.
References
Xie H, Liu Z, Gao Y, et al. Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz. Appl Phys Express, 2019, 12: 126506
Li L, Nomoto K, Pan M, et al. GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz. IEEE Electron Dev Lett, 2020, 41: 689–692
Du H, Liu Z, Hao L, et al. Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure. Appl Phys Lett, 2022, 121: 172102
Du H, Liu Z, Hao L, et al. High-performance AlN/GaN MISHEMTs on Si with in-situ SiN enhanced ohmic contacts for mobile mm-Wave front-end applications. IEEE Electron Dev Lett, 2023, 44: 911–914
Xie H, Liu Z, Gao Y, et al. CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V. Appl Phys Express, 2020, 13: 026503
Then H W, Radosavljevic M, Koirala P, et al. Advanced scaling of enhancement mode high-K gallium nitride-on-300 mm-Si(111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2021
Xing W, Liu Z, Qiu H, et al. InAlN/GaN HEMTs on Si with high fT of 250 GHz. IEEE Electron Dev Lett, 2018, 39: 75–78
Acknowledgements
This work was supported in part by National Key R&D Program (Grant No. 2020YFB1807300), National Science Fund for Distinguished Young Scholars (Grant No. 2020YFB1807300), Fundamental Research Funds for the Central Universities (Grant No. ZYTS24060), Shaanxi Key Industry Innovation Project (Grant No. 2020ZDLGY0304), and Guangdong Key Area R&D Program (Grant No. 2020B010171002).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Du, H., Hao, L., Liu, Z. et al. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci. China Inf. Sci. 67, 169402 (2024). https://doi.org/10.1007/s11432-024-3998-2
Received:
Revised:
Accepted:
Published:
Version of record:
DOI: https://doi.org/10.1007/s11432-024-3998-2