A state-of-the-art device model for disordered materials

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Organic Solar cell simulation

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Microlens simulation

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OLEDs simulation

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OFET simulation

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Simulating a solar cell JV curve in the light and dark

Designing reflective coatings using Gpvdm

Simulating OLEDs.

Use the power of device simulation to understand your experimental data from thin film devices such as Organic Solar cells, OFET, OLEDs, Perovskite solar cells, and many more.

Unlike may other models Gpvdm is purpose built from the ground up for simulating thin film devices made from disordered materials. Specifically, Gpvdm does not assume all carriers are in equilibrium and instead describes trapped carriers using a non-equilibrium Shockley-Read-Hall formalism, this enables disordered materials to be accurately modeled in steady state, time and frequency domain. A detailed description of the physical model can be found here. The model has had over 25,000 downloads to-date with over 130 publications having used the model. Gpvdm can simulate:

• Organic solar cells simulation - including drift diffusion/transfer matrix models
• Organic Field Effect Transistors (OFETs) - utilizing a 2D drift difusion solver
• Perovskite solar cell simulation - including mobile ion models
• Organic LEDs (OLEDs) - including ray tracing model
• Large area printed devices using effective circuit models
• Ray tracing - including micro lens simulation
• Optical (filters) and reflective coatings
• Steady state and time domain simulations - voltage/light transients as well as fs lasers
• Automatic fitting to experimental data for parameter extraction.
• Crystalline silicon solar solver
• a-Si solar model
• CIGS solar devices
• Sophisticated charge trapping/de-trapping/recombination models needed for the simulation of thin film devices
• Maxwell-Boltzmann or Fermi-Dirac statistics for free carriers.
• Auger recombination

The model can simulate many transient and steady state opto-electronic measurements including:

• Dark/Light JV curves
• Charge extraction by linearly increasing voltage (CELIV) transients
• Dark/Light photo-CELIV transients
• Transient Photo Current (TPC)
• Transient Photo Voltage (TPV)
• Impedance Spectroscopy (IS)
• Intensity Modulated Photocurrent Spectroscopy (IMPS)
• Voltage transients of an arbitrary shape
• Full optical model taking into account reflection at interfaces and absorption.
• Calculation of reflection profile
• Ray tracing
• EQE calculation
• Suns-Voc
• Suns-Jsc
• PL/EL

The model makes it easy to study the influence of material parameters such as mobility, energetic disorder, doping and recombination on device performance. All internal device parameters are easily accessible through the graphical interface .

• 1D/2D drift diffusion solver
• Highly optimized multi trap level SRH solver, where carrier populations are resolved in energy/position space as a function of time.
• Effective circuit models for arbitrary circuits
• Band to band recombination (Langevin)
• Full optical model taking into account reflection at interfaces and absorption.
• Arbitrarily definition of trap states, draw the DoS you want to simulate
• Ray tracing
• Transfer matrix models
• Voltage transients of an arbitrary shape
• Calculation of reflection profile
• A 3D thermal solver
• Interface dipole doping