Memristor R(V) model for Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3 A. S. Goossens, A. Das, and T. Banerjee Journal of Applied Physics 124, 152102 (2018); https://doi.org/10.1063/1.5037965

Model (programmed in C) for the memristive material's R(V) function in the increasing-voltage slopes of the article by Goossens et al. 
The author provided the experimental time functions for which a parametrizable skewed R(V) curve model was developed to predict the R(V) curves outside of the origingal four experimental conditions. The model is implemented as the product of a Gaussian-like with a Fermi-Dirac distribution.