A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation.

Alvaro Urain David del Rio Clara Isabel Luján-Martínez Mikko Kantanen Roc Berenguer A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation. 138180-138191 2024 12 IEEE Access https://doi.org/10.1109/ACCESS.2024.3465850 db/journals/access/access12.html#UrainRLKB24 streams/journals/access