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L. Gerrer M. Rafik G. Ribes Gérard Ghibaudo E. Vincent Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. 1259-1262 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.143 db/journals/mr/mr50.html#GerrerRRGV10

L. Gerrer Gérard Ghibaudo G. Ribes Oxide Soft Breakdown : From device modeling to small circuit simulation. 368-371 2009 ESSCIRC https://doi.org/10.1109/ESSCIRC.2009.5325941 conf/esscirc/2009 db/conf/esscirc/esscirc2009.html#GerrerGR09

C. R. Parthasarathy Mickael Denais Vincent Huard G. Ribes David Roy 0001 Chloe Guérin F. Perrier E. Vincent Alain Bravaix Designing in reliability in advanced CMOS technologies. 1464-1471 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.012 db/journals/mr/mr46.html#ParthasarathyDHRRGPVB06

G. Ribes S. Bruyère Mickael Denais David Roy 0001 Gérard Ghibaudo Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. 841-844 2005 45 Microelectron. Reliab. 5-6 https://doi.org/10.1016/j.microrel.2004.11.035 db/journals/mr/mr45.html#RibesBDRG05

G. Ribes S. Bruyère Mickael Denais Frederic Monsieur Vincent Huard David Roy 0001 Gérard Ghibaudo Multi-vibrational hydrogen release: Physical origin of T<sub>bd</sub>, Q<sub>bd</sub> power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. 1842-1854 2005 45 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2005.03.009 db/journals/mr/mr45.html#RibesBDMHRG05

G. Ribes S. Bruyère Frederic Monsieur David Roy 0001 Vincent Huard New insights into the change of voltage acceleration and temperature activation of oxide breakdown. 1211-1214 2003 43 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(03)00174-4 db/journals/mr/mr43.html#RibesBMRH03

M. Akbal Alain Bravaix S. Bruyère Mickael Denais L. Gerrer Gérard Ghibaudo Chloe Guérin M. Guillermet Vincent Huard Frederic Monsieur C. R. Parthasarathy F. Perrier M. Rafik David Roy 0001 L. Vallier E. Vincent