Reliability aspects of gate oxide under ESD pulse stress.

Kai Esmark

Adrien Ille Wolfgang Stadler Thomas Pompl Harald Gossner Tilo Brodbeck Kai Esmark Philipp Riess David Alvarez Kiran V. Chatty Robert Gauthier 0002 Alain Bravaix Reliability aspects of gate oxide under ESD pulse stress. 1407-1416 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.054 db/journals/mr/mr49.html#IlleSPGBERACGB09

David Alvarez Kiran V. Chatty Christian Russ Michel J. Abou-Khalil Junjun Li Robert Gauthier 0002 Kai Esmark Ralph Halbach Christopher Seguin Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. 1417-1423 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.051 db/journals/mr/mr49.html#AlvarezCRALGEHS09

Michael Heer Krzysztof Domanski Kai Esmark Ulrich Glaser Dionyz Pogany Erich Gornik Wolfgang Stadler Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. 1455-1464 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.052 https://www.wikidata.org/entity/Q110626907 db/journals/mr/mr49.html#HeerDEGPGS09

Tilo Brodbeck Kai Esmark Wolfgang Stadler CDM tests on interface test chips for the verification of ESD protection concepts. 1470-1475 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.053 db/journals/mr/mr49.html#BrodbeckES09

Ulrich Glaser Kai Esmark Martin Streibl Christian Russ Krzysztof Domanski Mauro Ciappa Wolfgang Fichtner SCR operation mode of diode strings for ESD protection. 1044-1053 2007 47 Microelectron. Reliab. 7 https://doi.org/10.1016/j.microrel.2006.11.013 db/journals/mr/mr47.html#GlaserESRDCF07

Wolfgang Stadler Kai Esmark K. Reynders M. Zubeidat Michael Graf Wolfgang Wilkening J. Willemen Ning Qu S. Mettler M. Etherton Test circuits for fast and reliable assessment of CDM robustness of I/O stages. 269-277 2005 45 Microelectron. Reliab. 2 https://doi.org/10.1016/j.microrel.2004.05.014 https://www.wikidata.org/entity/Q110626922 db/journals/mr/mr45.html#StadlerERZGWWQME05

S. Bargstädt-Franke Wolfgang Stadler Kai Esmark Martin Streibl Krzysztof Domanski Horst A. Gieser Heinrich Wolf Waclaw Bala Transient latch-up: experimental analysis and device simulation. 297-304 2005 45 Microelectron. Reliab. 2 https://doi.org/10.1016/j.microrel.2004.05.017 db/journals/mr/mr45.html#Bargstadt-FrankeSESDGWB05

Martin Streibl Franz Zängl Kai Esmark Robert Schwencker Wolfgang Stadler Harald Gossner S. Drüen Doris Schmitt-Landsiedel High abstraction level permutational ESD concept analysis. 313-321 2005 45 Microelectron. Reliab. 2 https://doi.org/10.1016/j.microrel.2004.05.019 db/journals/mr/mr45.html#StreiblZESSGDS05

Martin Streibl Kai Esmark A. Sieck Wolfgang Stadler M. Wendel J. Szatkowski Harald Gossner Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. 1001-1010 2003 43 Microelectron. Reliab. 7 https://doi.org/10.1016/S0026-2714(03)00126-4 db/journals/mr/mr43.html#StreiblESSWSG03

Wolfgang Stadler Kai Esmark Harald Gossner Martin Streibl M. Wendel Wolfgang Fichtner Dionyz Pogany Martin Litzenberger Erich Gornik Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. 1267-1274 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00133-6 https://www.wikidata.org/entity/Q110626983 db/journals/mr/mr42.html#StadlerEGSWFPLG02

Franz Zängl Harald Gossner Kai Esmark R. Owen G. Zimmermann Case study of a technology transfer causing ESD problems. 1275-1280 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00134-8 db/journals/mr/mr42.html#ZanglGEOZ02

Harald Gossner T. Müller-Lynch Kai Esmark Matthias Stecher Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. 385-393 2001 41 Microelectron. Reliab. 3 https://doi.org/10.1016/S0026-2714(00)00238-9 db/journals/mr/mr41.html#GossnerMES01

Martin Litzenberger R. Pichler Sergey Bychikhin Dionyz Pogany Erich Gornik Kai Esmark Harald Gossner Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. 1385-1390 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#LitzenbergerPBPGEG01 https://doi.org/10.1016/S0026-2714(01)00146-9 https://www.wikidata.org/entity/Q110627000

Kai Esmark Wolfgang Stadler M. Wendel Harald Gossner X. Guggenmos Wolfgang Fichtner Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. 1761-1770 2001 41 Microelectron. Reliab. 11 https://doi.org/10.1016/S0026-2714(01)00032-4 db/journals/mr/mr41.html#EsmarkSWGGF01

Michel J. Abou-Khalil David Alvarez Waclaw Bala S. Bargstädt-Franke Alain Bravaix Tilo Brodbeck Sergey Bychikhin Kiran V. Chatty Mauro Ciappa Krzysztof Domanski S. Drüen M. Etherton Wolfgang Fichtner Robert Gauthier 0002 Horst A. Gieser Ulrich Glaser Erich Gornik Harald Gossner Michael Graf X. Guggenmos Ralph Halbach Michael Heer Adrien Ille Junjun Li Martin Litzenberger S. Mettler T. Müller-Lynch R. Owen R. Pichler Dionyz Pogany Thomas Pompl Ning Qu K. Reynders Philipp Riess Christian Russ Doris Schmitt-Landsiedel Robert Schwencker Christopher Seguin A. Sieck Wolfgang Stadler Matthias Stecher Martin Streibl J. Szatkowski M. Wendel Wolfgang Wilkening J. Willemen Heinrich Wolf Franz Zängl G. Zimmermann M. Zubeidat