Polysilicon PIN diode characterization and scaling in low-cost 40nm technology for IoT applications.

Jérémy Postel-Pellerin Wiame El Khayyari Noemie Couzi Jérémy Postel-Pellerin Hassen Aziza Abderrezak Marzaki François Courbin Alexandre Malherbe Arnaud Régnier Stephan Niel Polysilicon PIN diode characterization and scaling in low-cost 40nm technology for IoT applications. 1-4 2025 ICECS https://doi.org/10.1109/ICECS66544.2025.11270704 conf/icecsys/2025 db/conf/icecsys/icecsys2025.html#KhayyariCPAMCMRN25 streams/conf/icecsys Noemie Couzi Jérémy Postel-Pellerin Hassen Aziza Alexandre Malherbe Abderrezak Marzaki Stephan Niel Optimization of digital transistors for low-cost and low-power IoT applications in 40nm technology. 1-7 2024 DTTIS https://doi.org/10.1109/DTTIS62212.2024.10780257 conf/dttis/2024 db/conf/dttis/dttis2024.html#CouziPAMMN24 streams/conf/dttis Hassen Aziza Jérémy Postel-Pellerin Moritz Fieback Said Hamdioui Hanzhi Xun Mottaqiallah Taouil Karine Coulié Wenceslas Rahajandraibe Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing. 1-5 2024 LATS https://doi.org/10.1109/LATS62223.2024.10534620 conf/latw/2024 db/conf/latw/lats2024.html#AzizaPFHXTCR24 Hassen Aziza Jérémy Postel-Pellerin Hussein Bazzi Mathieu Moreau Adnan Harb STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability. 3532-3536 2022 ISCAS https://doi.org/10.1109/ISCAS48785.2022.9937716 conf/iscas/2022 db/conf/iscas/iscas2022.html#AzizaPBMH22 Franck Matteo Roberto Simola Franck Melul Karine Coulié Jérémy Postel-Pellerin Arnaud Régnier Simulation of state of the art EEPROM programming window closure during endurance degradation. 1-5 2021 DTIS https://doi.org/10.1109/DTIS53253.2021.9505085 conf/dtis/2021 db/conf/dtis/dtis2021.html#MatteoSMCPR21 Hussein Bazzi Jérémy Postel-Pellerin Hassen Aziza Mathieu Moreau Adnan Harb Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation. 1-4 2020 DFT https://doi.org/10.1109/DFT50435.2020.9250726 conf/dft/2020 db/conf/dft/dft2020.html#BazziPAMH20 Hassen Aziza Hussein Bazzi Jérémy Postel-Pellerin Pierre Canet Mathieu Moreau Adnan Harb An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. 1-5 2019 DTIS https://doi.org/10.1109/DTIS.2019.8735057 conf/dtis/2019 db/conf/dtis/dtis2019.html#AzizaBPCMH19 Mounia Kharbouche-Harrari Romain Wacquez Gregory di Pendina Jean-Max Dutertre Jérémy Postel-Pellerin Driss Aboulkassimi Jean-Michel Portal Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM. 322-327 2019 IOLTS https://doi.org/10.1109/IOLTS.2019.8854374 conf/iolts/2019 db/conf/iolts/iolts2019.html#Kharbouche-Harrari19 Mounia Kharbouche-Harrari Gregory di Pendina Romain Wacquez Bernard Dieny Driss Aboulkassimi Jérémy Postel-Pellerin Jean-Michel Portal Light-Weight Cipher Based on Hybrid CMOS/STT-MRAM: Power/Area Analysis. 1-5 2019 ISCAS https://doi.org/10.1109/ISCAS.2019.8702734 conf/iscas/2019 db/conf/iscas/iscas2019.html#Kharbouche-Harrari19 Jérémy Postel-Pellerin Hussein Bazzi Hassen Aziza Pierre Canet Mathieu Moreau Vincenzo Della Marca Adnan Harb True random number generation exploiting SET voltage variability in resistive RAM memory arrays. 1-5 2019 NVMTS https://doi.org/10.1109/NVMTS47818.2019.9043369 conf/nvmts/2019 db/conf/nvmts/nvmts2019.html#Postel-Pellerin19

Vincenzo Della Marca Jérémy Postel-Pellerin Thibault Kempf Arnaud Régnier Philippe Chiquet Marc Bocquet Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. 159-163 2018 88-90 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2018.06.116 https://www.wikidata.org/entity/Q129145062 db/journals/mr/mr88.html#MarcaPKRCB18

Mounia Kharbouche-Harrari Rana Alhalabi Jérémy Postel-Pellerin Romain Wacquez Driss Aboulkassimi Etienne Nowak Ioan Lucian Prejbeanu Guillaume Prenat Gregory di Pendina MRAM: from STT to SOT, for security and memory. 1-6 2018 DCIS https://doi.org/10.1109/DCIS.2018.8681468 conf/dcis/2018 db/conf/dcis/dcis2018.html#Kharbouche-Harrari18 Mounia Kharbouche-Harrari Jérémy Postel-Pellerin Gregory di Pendina Romain Wacquez Driss Aboulkassimi Marc Bocquet R. Sousa R. Delattre Jean-Michel Portal Impact of a Laser Pulse on a STT-MRAM Bitcell: Security and Reliability Issues. 243-244 2018 IOLTS https://doi.org/10.1109/IOLTS.2018.8474088 conf/iolts/2018 db/conf/iolts/iolts2018.html#Kharbouche-Harrari18

Pierre Canet Jérémy Postel-Pellerin Hassen Aziza Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. 36-41 2016 64 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.07.096 db/journals/mr/mr64.html#CanetPA16

Vincenzo Della Marca Jérémy Postel-Pellerin Guillaume Just Pierre Canet Jean-Luc Ogier Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. 2262-2265 2014 54 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2014.07.063 db/journals/mr/mr54.html#MarcaPJCO14

Pierre Canet Jérémy Postel-Pellerin Jean-Luc Ogier Access resistor modelling for EEPROM's retention test vehicle. 1218-1223 2013 53 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2013.07.008 db/journals/mr/mr53.html#CanetPO13

Guillaume Just Vincenzo Della Marca Arnaud Régnier Jean-Luc Ogier Jérémy Postel-Pellerin Jean-Michel Portal Pascal Masson Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. 717-724 2012 8 J. Low Power Electron. 5 https://doi.org/10.1166/jolpe.2012.1230 db/journals/jolpe/jolpe8.html#JustMROPPM12

Philippe Chiquet Pascal Masson Romain Laffont Gilles Micolau Jérémy Postel-Pellerin Frédéric Lalande Bernard Bouteille Jean-Luc Ogier Investigation of the effects of constant voltage stress on thin SiO<sub>2</sub> layers using dynamic measurement protocols. 1895-1900 2012 52 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2012.06.124 db/journals/mr/mr52.html#ChiquetMLMPLBO12

Jérémy Postel-Pellerin Romain Laffont Gilles Micolau Frédéric Lalande Arnaud Régnier Bernard Bouteille Leakage paths identification in NVM using biased data retention. 1474-1478 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.074 db/journals/mr/mr50.html#Postel-PellerinLMLRB10

Jérémy Postel-Pellerin Frédéric Lalande Pierre Canet Rachid Bouchakour F. Jeuland B. Bertello B. Villard Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. 1056-1059 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.06.020 db/journals/mr/mr49.html#Postel-PellerinLCBJBV09

Jérémy Postel-Pellerin Frédéric Lalande Pierre Canet Rachid Bouchakour F. Jeuland L. Morancho Modeling charge variation during data retention of MLC Flash memories. 1060-1063 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.06.034 db/journals/mr/mr49.html#Postel-PellerinLCBJM09

Driss Aboulkassimi Rana Alhalabi Hassen Aziza Hussein Bazzi B. Bertello Marc Bocquet Rachid Bouchakour Bernard Bouteille Pierre Canet Philippe Chiquet Karine Coulié François Courbin Noemie Couzi R. Delattre Bernard Dieny Jean-Max Dutertre Moritz Fieback Said Hamdioui Adnan Harb F. Jeuland Guillaume Just Thibault Kempf Mounia Kharbouche-Harrari Wiame El Khayyari Romain Laffont Frédéric Lalande Alexandre Malherbe Vincenzo Della Marca Abderrezak Marzaki Pascal Masson Franck Matteo Franck Melul Gilles Micolau L. Morancho Mathieu Moreau Stephan Niel Etienne Nowak Jean-Luc Ogier Gregory di Pendina Jean-Michel Portal Ioan Lucian Prejbeanu Guillaume Prenat Wenceslas Rahajandraibe Arnaud Régnier Roberto Simola R. Sousa Mottaqiallah Taouil B. Villard Romain Wacquez Hanzhi Xun