<?xml version="1.0"?>
<dblpperson name="G. N&#233;au" pid="86/8449" n="1">
<person key="homepages/86/8449" mdate="2010-09-15">
<author pid="86/8449">G. N&#233;au</author>
</person>
<r><article key="journals/mr/NeauMVVVBPR07" mdate="2020-11-03">
<author pid="86/8449">G. N&#233;au</author>
<author orcid="0000-0002-3917-7087" pid="277/6739">Fr&#233;d&#233;ric Martinez</author>
<author pid="29/622">M. Valenza</author>
<author pid="28/3893">J. C. Vildeuil</author>
<author pid="62/756">E. Vincent</author>
<author pid="44/3685">Fr&#233;d&#233;ric Boeuf</author>
<author pid="25/8443">F. Payet</author>
<author pid="30/8445">K. Rochereau</author>
<title>Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.</title>
<pages>567-572</pages>
<year>2007</year>
<volume>47</volume>
<journal>Microelectron. Reliab.</journal>
<number>4-5</number>
<ee>https://doi.org/10.1016/j.microrel.2007.01.079</ee>
<url>db/journals/mr/mr47.html#NeauMVVVBPR07</url>
</article>
</r>
<coauthors n="7" nc="1">
<co c="0"><na f="b/Boeuf:Fr=eacute=d=eacute=ric" pid="44/3685">Fr&#233;d&#233;ric Boeuf</na></co>
<co c="0"><na f="m/Martinez:Fr=eacute=d=eacute=ric" pid="277/6739">Fr&#233;d&#233;ric Martinez</na></co>
<co c="0"><na f="p/Payet:F=" pid="25/8443">F. Payet</na></co>
<co c="0"><na f="r/Rochereau:K=" pid="30/8445">K. Rochereau</na></co>
<co c="0"><na f="v/Valenza:M=" pid="29/622">M. Valenza</na></co>
<co c="0"><na f="v/Vildeuil:J=_C=" pid="28/3893">J. C. Vildeuil</na></co>
<co c="0"><na f="v/Vincent:E=" pid="62/756">E. Vincent</na></co>
</coauthors>
</dblpperson>

