Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors.

P. Benoit Jérémy Raoult C. Delseny Fabien Pascal L. Snadny J. C. Vildeuil M. Marin B. Martinet D. Cottin Olivier Noblanc Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. 1800-1806 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.097 db/journals/mr/mr45.html#BenoitRDPSVMMCN05