Reliability aspects of gate oxide under ESD pulse stress.

Thomas Pompl

Adrien Ille Wolfgang Stadler Thomas Pompl Harald Gossner Tilo Brodbeck Kai Esmark Philipp Riess David Alvarez Kiran V. Chatty Robert Gauthier 0002 Alain Bravaix Reliability aspects of gate oxide under ESD pulse stress. 1407-1416 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.054 db/journals/mr/mr49.html#IlleSPGBERACGB09

Thomas Pompl Christian Schlünder Martina Hommel Heiko Nielen Jens Schneider Practical aspects of reliability analysis for IC designs. 193-198 2006 conf/dac/2006 DAC https://doi.org/10.1145/1146909.1146962 db/conf/dac/dac2006.html#PomplSHNS06

Thomas Pompl Michael Röhner Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics. 1835-1841 2005 45 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2005.04.007 db/journals/mr/mr45.html#PomplR05

David Alvarez Alain Bravaix Tilo Brodbeck Kiran V. Chatty Kai Esmark Robert Gauthier 0002 Harald Gossner Martina Hommel Adrien Ille Heiko Nielen Philipp Riess Michael Röhner Christian Schlünder Jens Schneider Wolfgang Stadler