Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators.

Shigetaka Kumashiro Kazutoshi Kobayashi Tomoharu Kishita Hiroki Nakano Jun Furuta Mitsuhiko Igarashi Shigetaka Kumashiro Michitarou Yabuuchi Hironori Sakamoto Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators. 1-7 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117873 conf/irps/2023 db/conf/irps/irps2023.html#KobayashiKNFIKYS23

Shigetaka Kumashiro Tatsuya Kamei Akira Hiroki Kazutoshi Kobayashi An Efficient and Accurate Time Step Control Method for Power Device Transient Simulation Utilizing Dominant Time Constant Approximation. 451-463 2020 39 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2 https://doi.org/10.1109/TCAD.2018.2889673 https://www.wikidata.org/entity/Q128666246 db/journals/tcad/tcad39.html#KumashiroKHK20

Satoshi Takaya Yoji Bando Toru Ohkawa Toshiharu Takaramoto Toshio Yamada Masaaki Souda Shigetaka Kumashiro Tohru Mogami Makoto Nagata Measurements and Simulation of Sensitivity of Differential-Pair Transistors against Substrate Voltage Variation. 884-893 2013 96-C IEICE Trans. Electron. 6 https://doi.org/10.1587/transele.E96.C.884 http://search.ieice.org/bin/summary.php?id=e96-c_6_884 db/journals/ieicet/ieicet96c.html#TakayaBOTYSKMN13

Shigetaka Kumashiro A predictable compact model for non-monotonous Vth-Pelgrom plot of long channel halo-implanted transistors. 391-397 2013 ISQED https://doi.org/10.1109/ISQED.2013.6523641 conf/isqed/2013 db/conf/isqed/isqed2013.html#Kumashiro13

Yoji Bando Satoshi Takaya Toru Ohkawa Toshiharu Takaramoto Toshio Yamada Masaaki Souda Shigetaka Kumashiro Tohru Mogami Makoto Nagata On-Chip In-Place Measurements of Vth and Signal/Substrate Response of Differential Pair Transistors. 137-145 2012 95-C IEICE Trans. Electron. 1 https://doi.org/10.1587/transele.E95.C.137 http://search.ieice.org/bin/summary.php?id=e95-c_1_137 db/journals/ieicet/ieicet95c.html#BandoTOTYSKMN12

Hironori Sakamoto Shigetaka Kumashiro Shigeo Sato Naoki Wakita Tohru Mogami HiSIM-RP: A reverse-profiling based 1st principles compact MOSFET model and its application to variability analysis of 90nm and 40nm CMOS. 553-560 2012 ISQED https://doi.org/10.1109/ISQED.2012.6187548 conf/isqed/2012 db/conf/isqed/isqed2012.html#SakamotoKSWM12

Yoji Bando Satoshi Takaya Toru Ohkawa Toshiharu Takaramoto Toshio Yamada Masaaki Souda Shigetaka Kumashiro Tohru Mogami Makoto Nagata A Continuous-Time Waveform Monitoring Technique for On-Chip Power Noise Measurements in VLSI Circuits. 495-503 2011 94-C IEICE Trans. Electron. 4 https://doi.org/10.1587/transele.E94.C.495 http://search.ieice.org/bin/summary.php?id=e94-c_4_495 db/journals/ieicet/ieicet94c.html#BandoTOTYSKMN11

Masaaki Souda Yoji Bando Satoshi Takaya Toru Ohkawa Toshiharu Takaramoto Toshio Yamada Shigetaka Kumashiro Tohru Mogami Makoto Nagata On-Chip Single Tone Pseudo-Noise Generator for Analog IP Noise Tolerance Measurement. 1024-1031 2011 94-C IEICE Trans. Electron. 6 https://doi.org/10.1587/transele.E94.C.1024 http://search.ieice.org/bin/summary.php?id=e94-c_6_1024 db/journals/ieicet/ieicet94c.html#SoudaBTOTYKMN11

Satoshi Takaya Yoji Bando Toru Ohkawa Toshiharu Takaramoto Toshio Yamada Masaaki Souda Shigetaka Kumashiro Tohru Mogami Makoto Nagata Accurate analysis of substrate sensitivity of active transistors in an analog circuit. 56-61 2011 ISQED https://doi.org/10.1109/ISQED.2011.5770703 conf/isqed/2011 db/conf/isqed/isqed2011.html#TakayaBOTYSKMN11

Kenta Yamada Toshiyuki Syo Hisao Yoshimura Masaru Ito Tatsuya Kunikiyo Toshiki Kanamoto Shigetaka Kumashiro Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns. 1349-1358 2010 93-C IEICE Trans. Electron. 8 https://doi.org/10.1587/transele.E93.C.1349 http://search.ieice.org/bin/summary.php?id=e93-c_8_1349 db/journals/ieicet/ieicet93c.html#YamadaSYIKKK10

Kenta Yamada Takashi Sato 0001 Shuhei Amakawa Noriaki Nakayama Kazuya Masu Shigetaka Kumashiro Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress. 1142-1150 2008 91-C IEICE Trans. Electron. 7 https://doi.org/10.1093/ietele/e91-c.7.1142 db/journals/ieicet/ieicet91c.html#YamadaSANMK08

Tatsuya Ezaki Dondee Navarro Youichi Takeda Norio Sadachika Gaku Suzuki Mitiko Miura-Mattausch Hans Jürgen Mattausch Tatsuya Ohguro Takahiro Iizuka Masahiko Taguchi Shigetaka Kumashiro Shunsuke Miyamoto Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. 1096-1106 2008 79 Math. Comput. Simul. 4 https://doi.org/10.1016/j.matcom.2007.10.008 db/journals/mcs/mcs79.html#EzakiNTSSMMOITKM08

Shizunori Matsumoto Hiroaki Ueno Satoshi Hosokawa Toshihiko Kitamura Mitiko Miura-Mattausch Hans Jürgen Mattausch Tatsuya Ohguro Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. 247-254 2005 88-C IEICE Trans. Electron. 2 https://doi.org/10.1093/ietele/E88-C.2.247 db/journals/ieicet/ieicet88c.html#MatsumotoUHKMMOKYYN05

Dondee Navarro Takeshi Mizoguchi Masami Suetake Kazuya Hisamitsu Hiroaki Ueno Mitiko Miura-Mattausch Hans Jürgen Mattausch Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. 1079-1086 2005 88-C IEICE Trans. Electron. 5 https://doi.org/10.1093/ietele/e88-c.5.1079 db/journals/ieicet/ieicet88c.html#NavarroMSHUMMKYYN05

Youichi Takeda Dondee Navarro Shingo Chiba Mitiko Miura-Mattausch Hans Jürgen Mattausch Tatsuya Ohguro Takahiro Iizuka Masahiko Taguchi Shigetaka Kumashiro Shunsuke Miyamoto MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. 827-830 2005 CICC https://doi.org/10.1109/CICC.2005.1568797 conf/cicc/2005 db/conf/cicc/cicc2005.html#TakedaNCMMOITKM05 Kazuya Hisamitsu Hiroaki Ueno Masayasu Tanaka Daisuke Kitamaru Mitiko Miura-Mattausch Hans Jürgen Mattausch Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design. 179-183 2003 ASP-DAC https://doi.org/10.1145/1119772.1119807 conf/aspdac/2003 db/conf/aspdac/aspdac2003.html#HisamitsuUTKMMKYYN03

Mitiko Miura-Mattausch Hiroaki Ueno Hans Jürgen Mattausch Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama Circuit Simulation Models for Coming MOSFET Generations. 740-748 2002 85-A IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 4 http://search.ieice.org/bin/summary.php?id=e85-a_4_740 db/journals/ieiceta/ieiceta85.html#Miura-Mattausch02

D. Miyawaki Shizunori Matsumoto Hans Jürgen Mattausch S. Ooshiro Masami Suetake Mitiko Miura-Mattausch Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama Correlation method of circuit-performance and technology fluctuations for improved design reliability. 39-44 2001 conf/aspdac/2001 ASP-DAC https://doi.org/10.1145/370155.370260 db/conf/aspdac/aspdac2001.html#MiyawakiMMOSMKYYN01 Shizunori Matsumoto Hans Jürgen Mattausch S. Ooshiro Y. Tatsumi Mitiko Miura-Mattausch Shigetaka Kumashiro Terufumi Yamaguchi Kyoji Yamashita Noriaki Nakayama Test-circuit-based extraction of inter- and intra-chip MOSFET-performance variations for analog-design reliability. 357-360 2001 CICC https://doi.org/10.1109/CICC.2001.929801 conf/cicc/2001 db/conf/cicc/cicc2001.html#MatsumotoMOTMKY01

Shigetaka Kumashiro Ronald A. Rohrer Andrzej J. Strojwas Asymptotic waveform evaluation for transient analysis of 3-D interconnect structures. 988-996 1993 12 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7 https://doi.org/10.1109/43.238035 db/journals/tcad/tcad12.html#KumashiroRS93

Shuhei Amakawa Yoji Bando Shingo Chiba Tatsuya Ezaki Jun Furuta Akira Hiroki Kazuya Hisamitsu Satoshi Hosokawa Mitsuhiko Igarashi Takahiro Iizuka Masaru Ito Tatsuya Kamei Toshiki Kanamoto Tomoharu Kishita Daisuke Kitamaru Toshihiko Kitamura Kazutoshi Kobayashi Tatsuya Kunikiyo Kazuya Masu Shizunori Matsumoto Hans Jürgen Mattausch Mitiko Miura-Mattausch Shunsuke Miyamoto D. Miyawaki Takeshi Mizoguchi Tohru Mogami Makoto Nagata Hiroki Nakano Noriaki Nakayama Dondee Navarro Tatsuya Ohguro Toru Ohkawa S. Ooshiro Ronald A. Rohrer Norio Sadachika Hironori Sakamoto Shigeo Sato Takashi Sato 0001 Masaaki Souda Andrzej J. Strojwas Masami Suetake Gaku Suzuki Toshiyuki Syo Masahiko Taguchi Toshiharu Takaramoto Satoshi Takaya Youichi Takeda Masayasu Tanaka Y. Tatsumi Hiroaki Ueno Naoki Wakita Michitarou Yabuuchi Kenta Yamada Toshio Yamada Terufumi Yamaguchi Tetsuya Yamaguchi Kyoji Yamashita Hisao Yoshimura