A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices.

S. Pommier

S. Pietranico Stéphane Lefebvre S. Pommier M. Berkani Bouaroudj S. Bontemps A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. 1824-1829 2011 51 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2011.06.009 db/journals/mr/mr51.html#PietranicoLPBB11

S. Pietranico S. Pommier Stéphane Lefebvre Zoubir Khatir S. Bontemps Characterisation of power modules ceramic substrates for reliability aspects. 1260-1266 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.06.026 db/journals/mr/mr49.html#PietranicoPLKB09

S. Bontemps M. Berkani Bouaroudj Zoubir Khatir Stéphane Lefebvre S. Pietranico