Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.

Alain Bravaix https://orcid.org/0000-0002-2308-3537 Tidjani Garba-Seybou Xavier Federspiel Frederic Monsieur Mathieu Sicre Florian Cacho Joycelyn Hai Alain Bravaix Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. 1-8 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117725 conf/irps/2023 db/conf/irps/irps2023.html#GarbaSeybouFMSCHB23 Tidjani Garba-Seybou Xavier Federspiel Alain Bravaix Florian Cacho New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. 11 2022 IRPS https://doi.org/10.1109/IRPS48227.2022.9764431 conf/irps/2022 db/conf/irps/irps2022.html#Garba-SeybouFBC22 Tidjani Garba-Seybou Xavier Federspiel Alain Bravaix Florian Cacho Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. 1-5 2021 IRPS https://doi.org/10.1109/IRPS46558.2021.9405214 conf/irps/2021 db/conf/irps/irps2021.html#Garba-SeybouFBC21 Alain Bravaix Edith Kussener David Ney Xavier Federspiel Florian Cacho Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. 1-8 2020 IRPS https://doi.org/10.1109/IRPS45951.2020.9129214 conf/irps/2020 db/conf/irps/irps2020.html#BravaixKNFC20 Cheikh Diouf N. Guitard M. Rafik J. J. Martinez X. Federspiel Alain Bravaix D. Muller David Roy 0001 Process Optimization for HCI Improvement in I/O Analog Devices. 1-6 2019 IRPS https://doi.org/10.1109/IRPS.2019.8720544 conf/irps/2019 db/conf/irps/irps2019.html#DioufGRMFBMR19 Vincent Huard Souhir Mhira A. Barclais X. Lecocq F. Raugi M. Cantournet Alain Bravaix Managing electrical reliability in consumer systems for improved energy efficiency. 3 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353561 conf/irps/2018 db/conf/irps/irps2018.html#HuardMBLRCB18 Souhir Mhira Vincent Huard D. Arora Philippe Flatresse Alain Bravaix Resilient automotive products through process, temperature and aging compensation schemes. 3 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353568 conf/irps/2018 db/conf/irps/irps2018.html#MhiraHAFB18 Vincent Huard Cheikh Ndiaye M. Arabi Narendra Parihar X. Federspiel Souhir Mhira S. Mahapatra Alain Bravaix Key parameters driving transistor degradation in advanced strained SiGe channels. 4-1 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353699 conf/irps/2018 db/conf/irps/irps2018.html#HuardNAPFMMB18

Vincent Huard Souhir Mhira Florian Cacho Alain Bravaix Enabling robust automotive electronic components in advanced CMOS nodes. 13-24 2017 76-77 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2017.07.064 db/journals/mr/mr76.html#HuardMCB17

Souhir Mhira Vincent Huard Ahmed Benhassain Florian Cacho Sylvie Naudet Abhishek Jain 0003 C. R. Parthasarathy Alain Bravaix Dynamic aging compensation and Safety measures in Automotive environment. 106-112 2017 IOLTS https://doi.org/10.1109/IOLTS.2017.8046204 conf/iolts/2017 db/conf/iolts/iolts2017.html#MhiraHBCNJPB17 Souhir Mhira Vincent Huard Ahmed Benhassain Florian Cacho David Meyer Sylvie Naudet Abhishek Jain 0003 C. R. Parthasarathy Alain Bravaix Cognitive approach to support dynamic aging compensation. 1-7 2017 ITC https://doi.org/10.1109/TEST.2017.8242042 conf/itc/2017 db/conf/itc/itc2017.html#MhiraHBCMNJPB17

Cheikh Ndiaye Vincent Huard X. Federspiel Florian Cacho Alain Bravaix Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. 158-162 2016 64 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.07.085 db/journals/mr/mr64.html#NdiayeHFCB16

Alain Bravaix Florian Cacho X. Federspiel Cheikh Ndiaye Souhir Mhira Vincent Huard Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. 163-167 2016 64 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.07.092 db/journals/mr/mr64.html#BravaixCFNMH16

Alain Bravaix M. Saliva Florian Cacho X. Federspiel Cheikh Ndiaye Souhir Mhira Edith Kussener E. Pauly Vincent Huard Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. 43-46 2016 IOLTS https://doi.org/10.1109/IOLTS.2016.7604669 conf/iolts/2016 db/conf/iolts/iolts2016.html#BravaixSCFNMKPH16 M. Saliva Florian Cacho Vincent Huard X. Federspiel D. Angot Ahmed Benhassain Alain Bravaix Lorena Anghel Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. 441-446 2015 DATE http://dl.acm.org/citation.cfm?id=2755854 https://ieeexplore.ieee.org/document/7092430/ conf/date/2015 db/conf/date/date2015.html#SalivaCHFABBA15 M. Saliva Florian Cacho Cheikh Ndiaye Vincent Huard D. Angot Alain Bravaix Lorena Anghel Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. 4 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112782 conf/irps/2015 db/conf/irps/irps2015.html#SalivaCNHABA15

Yoann Mamy Randriamihaja Vincent Huard Xavier Federspiel Alban Zaka Pierpaolo Palestri Denis Rideau David Roy 0001 Alain Bravaix Microscopic scale characterization and modeling of transistor degradation under HC stress. 2513-2520 2012 52 Microelectron. Reliab. 11 https://doi.org/10.1016/j.microrel.2012.04.005 db/journals/mr/mr52.html#RandriamihajaHFZPRRB12

F. Molière B. Foucher Philippe Perdu Alain Bravaix Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. 1381-1385 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.07.001 db/journals/mr/mr49.html#MoliereFPB09

Adrien Ille Wolfgang Stadler Thomas Pompl Harald Gossner Tilo Brodbeck Kai Esmark Philipp Riess David Alvarez Kiran V. Chatty Robert Gauthier 0002 Alain Bravaix Reliability aspects of gate oxide under ESD pulse stress. 1407-1416 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.054 db/journals/mr/mr49.html#IlleSPGBERACGB09

D. Lachenal Alain Bravaix Frederic Monsieur Yannick Rey-Tauriac Degradation mechanism understanding of NLDEMOS SOI in RF applications. 1634-1638 2007 47 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2007.07.024 db/journals/mr/mr47.html#LachenalBMR07

C. R. Parthasarathy Alain Bravaix Chloe Guérin Mickael Denais Vincent Huard Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. 191-200 2007 conf/patmos/2007 PATMOS https://doi.org/10.1007/978-3-540-74442-9_19 db/conf/patmos/patmos2007.html#ParthasarathyBGDH07

C. R. Parthasarathy Mickael Denais Vincent Huard G. Ribes David Roy 0001 Chloe Guérin F. Perrier E. Vincent Alain Bravaix Designing in reliability in advanced CMOS technologies. 1464-1471 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.012 db/journals/mr/mr46.html#ParthasarathyDHRRGPVB06

Vincent Huard Mickael Denais F. Perrier Nathalie Revil C. R. Parthasarathy Alain Bravaix E. Vincent A thorough investigation of MOSFETs NBTI degradation. 83-98 2005 45 Microelectron. Reliab. 1 https://doi.org/10.1016/j.microrel.2004.04.027 db/journals/mr/mr45.html#HuardDPRPBV05

Didier Goguenheim Alain Bravaix S. Gomri J. M. Moragues C. Monserie N. Legrand Philippe Boivin Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. 487-492 2005 45 Microelectron. Reliab. 3-4 https://doi.org/10.1016/j.microrel.2004.09.004 db/journals/mr/mr45.html#GoguenheimBGMMLB05

C. Trapes Didier Goguenheim Alain Bravaix Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. 883-886 2005 45 Microelectron. Reliab. 5-6 https://doi.org/10.1016/j.microrel.2004.10.025 db/journals/mr/mr45.html#TrapesGB05

Yannick Rey-Tauriac J. Badoc B. Reynard Raúl Andrés Bianchi D. Lachenal Alain Bravaix Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. 1349-1354 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.019 db/journals/mr/mr45.html#Rey-TauriacBRBLB05

Alain Bravaix Didier Goguenheim Mickael Denais Vincent Huard C. R. Parthasarathy F. Perrier Nathalie Revil E. Vincent Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. 1370-1375 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.023 db/journals/mr/mr45.html#BravaixGDHPPRV05

Alain Bravaix Didier Goguenheim Nathalie Revil E. Vincent Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. 65-77 2004 44 Microelectron. Reliab. 1 https://doi.org/10.1016/j.microrel.2003.10.002 db/journals/mr/mr44.html#BravaixGRV04

Alain Bravaix C. Trapes Didier Goguenheim Nathalie Revil E. Vincent Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. 1241-1246 2003 43 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(03)00178-1 db/journals/mr/mr43.html#BravaixTGRV03

Alain Bravaix Didier Goguenheim Nathalie Revil E. Vincent Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. 1313-1318 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#BravaixGRV01 https://doi.org/10.1016/S0026-2714(01)00206-2

David Alvarez Lorena Anghel D. Angot M. Arabi D. Arora J. Badoc A. Barclais Sidi Ahmed BenhassainAhmed Benhassain Raúl Andrés Bianchi Philippe Boivin Tilo Brodbeck Florian Cacho M. Cantournet Kiran V. Chatty Mickael Denais Cheikh Diouf Kai Esmark X. FederspielXavier Federspiel Philippe Flatresse B. Foucher Tidjani Garba-Seybou Robert Gauthier 0002 Didier Goguenheim S. Gomri Harald Gossner Chloe Guérin N. Guitard Joycelyn Hai Vincent Huard Adrien Ille Abhishek Jain 0003 Edith Kussener D. Lachenal X. Lecocq N. Legrand S. Mahapatra J. J. Martinez David Meyer Souhir Mhira F. Molière C. Monserie Frederic Monsieur J. M. Moragues D. Muller Sylvie Naudet Cheikh Ndiaye David Ney Pierpaolo Palestri Narendra Parihar C. R. Parthasarathy E. Pauly Philippe Perdu F. Perrier Thomas Pompl M. Rafik Yoann Mamy Randriamihaja F. Raugi Nathalie Revil Yannick Rey-Tauriac B. Reynard G. Ribes Denis Rideau Philipp Riess David Roy 0001 M. Saliva Mathieu Sicre Wolfgang Stadler C. Trapes E. Vincent Alban Zaka