Peter Friedrichs
Peter Friedrichs
Ruggedness of SiC devices under extreme conditions.
1-5
2020
IRPS
https://doi.org/10.1109/IRPS45951.2020.9129344
conf/irps/2020
db/conf/irps/irps2020.html#Friedrichs20
Mounira Berkani
Stéphane Lefebvre
Narjes Boughrara
Zoubir Khatir
Jean-Claude Faugières
Peter Friedrichs
Ali Haddouche
Estimation of SiC JFET temperature during short-circuit operations.
1358-1362
2009
49
Microelectron. Reliab.
9-11
https://doi.org/10.1016/j.microrel.2009.06.024
db/journals/mr/mr49.html#BerkaniLBKFFH09
Michael Treu
Roland Rupp
P. Blaschitz
K. Rüschenschmidt
Thomas Sekinger
Peter Friedrichs
Rudolf Elpelt
D. Peters
Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET.
324-330
2007
IAS
https://doi.org/10.1109/07IAS.2007.10
conf/iasam/2007
db/conf/iasam/iasam2007.html#TreuRBRSFEP07
Mounira Berkani
P. Blaschitz
Narjes Boughrara
Rudolf Elpelt
Jean-Claude Faugières
Ali Haddouche
Zoubir Khatir
Stéphane Lefebvre
D. Peters
Roland Rupp
K. Rüschenschmidt
Thomas Sekinger
Michael Treu