Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.

Noureddine Yacoubi

Nabil Sghaier M'Hamed Trabelsi Noureddine Yacoubi Jean-Marie Bluet Abdelkader Souifi Gérard Guillot Christophe Gaquière J. C. DeJaeger Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. 363-370 2006 37 Microelectron. J. 4 https://doi.org/10.1016/j.mejo.2005.05.014 db/journals/mj/mj37.html#SghaierTYBSGGD06

Nabil Sghaier M'Hamed Trabelsi Ne. Sghaier Liviu Militaru Abdelkader Souifi Adel Kalboussi Noureddine Yacoubi Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. 1399-1403 2006 37 Microelectron. J. 11 https://doi.org/10.1016/j.mejo.2006.06.015 db/journals/mj/mj37.html#SghaierTSMSKY06

Jean-Marie Bluet J. C. DeJaeger Christophe Gaquière Gérard Guillot A. KalboussiAdel Kalboussi Liviu Militaru Nabil Sghaier Ne. Sghaier A. SouifiAbdelkader Souifi M'Hamed Trabelsi