Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics.

B. Foucher

F. Molière B. Foucher Philippe Perdu Alain Bravaix Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. 1381-1385 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.07.001 db/journals/mr/mr49.html#MoliereFPB09

E. Scanff K. L. Feldman S. Ghelam Peter Sandborn M. Glade B. Foucher Life cycle cost impact of using prognostic health management (PHM) for helicopter avionics. 1857-1864 2007 47 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2007.02.014 db/journals/mr/mr47.html#ScanffFGSGF07

B. Foucher J. Boullié B. Meslet D. Das A review of reliability prediction methods for electronic devices. 1155-1162 2002 42 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(02)00087-2 db/journals/mr/mr42.html#FoucherBMD02

Philippe Galy V. Berland B. Foucher A. Guilhaume J. P. Chante S. Bardy F. Blanc Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. 1299-1302 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00138-5 db/journals/mr/mr42.html#GalyBFGCBB02

A. Guilhaume Philippe Galy J. P. Chante B. Foucher F. Blanc Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. 1433-1437 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#GuilhaumeGCFB01 https://doi.org/10.1016/S0026-2714(01)00175-5

S. Bardy V. Berland F. Blanc J. Boullié Alain Bravaix J. P. Chante D. Das K. L. Feldman Philippe Galy S. Ghelam M. Glade A. Guilhaume B. Meslet F. Molière Philippe Perdu Peter Sandborn E. Scanff