Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation.

Michael Schenkel Paul Pfäffli Wolfgang Wilkening D. Aemmer Wolfgang Fichtner Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation. 815-822 2001 41 Microelectron. Reliab. 6 https://doi.org/10.1016/S0026-2714(01)00028-2 db/journals/mr/mr41.html#SchenkelPWAF01