Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.

Eldad Bahat-Treidel Manuel Fregolent Alberto Marcuzzi Carlo De Santi Eldad Bahat-Treidel Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. 1-5 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117719 conf/irps/2023 db/conf/irps/irps2023.html#FregolentMSBMZM23 Oliver Hilt Frank Brunner Eldad Bahat-Treidel Mihaela Wolf Joachim Würfl GaN-channel HEMTs with AlN buffer for high-voltage switching. 1-2 2021 DRC https://doi.org/10.1109/DRC52342.2021.9467164 conf/drc/2021 db/conf/drc/drc2021.html#HiltBTWW21 Eldad Bahat-Treidel Oliver Hilt H. Christopher A. Klehr A. Ginolas A. Liero Joachim Würfl The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. 1-2 2020 DRC https://doi.org/10.1109/DRC50226.2020.9135182 conf/drc/2020 db/conf/drc/drc2020.html#TreidelHCKGLW20

Matteo Meneghini Oliver Hilt Clément Fleury Riccardo Silvestri Mattia Capriotti Gottfried Strasser Dionyz Pogany Eldad Bahat-Treidel Frank Brunner A. Knauer Joachim Würfl Isabella Rossetto Enrico Zanoni Gaudenzio Meneghesso Stefano Dalcanale Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. 177-184 2016 58 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2015.11.026 https://www.wikidata.org/entity/Q62475753 db/journals/mr/mr58.html#MeneghiniHFSCSP16

Eldad Bahat-Treidel Oliver Hilt O. Bahat Treidel Joachim Würfl Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. 556-559 2016 64 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.07.077 db/journals/mr/mr64.html#Bahat-TreidelHT16

Mattia Capriotti Clément Fleury Ole Bethge Matteo Rigato Suzanne Lancaster Dionyz Pogany Gottfried Strasser Eldad Bahat-Treidel Oliver Hilt Frank Brunner Joachim Würfl E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. 60-63 2015 ESSDERC https://doi.org/10.1109/ESSDERC.2015.7324713 https://www.wikidata.org/entity/Q62475757 conf/essderc/2015 db/conf/essderc/essderc2015.html#CapriottiFBRLPS15

Sergey A. Chevtchenko Matthias Schulz Eldad Bahat-Treidel Wilfred John Stephan Freyer Paul Kurpas Joachim Würfl Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. 2191-2195 2014 54 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2014.07.046 db/journals/mr/mr54.html#ChevtchenkoSBJF14

Alberto Zanandrea Eldad Bahat-Treidel Fabiana Rampazzo Antonio Stocco Matteo Meneghini Enrico Zanoni Oliver Hilt Ponky Ivo Joachim Würfl Gaudenzio Meneghesso Single- and double-heterostructure GaN-HEMTs devices for power switching applications. 2426-2430 2012 52 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2012.06.062 db/journals/mr/mr52.html#ZanandreaBRSMZHIWM12

Ponky Ivo Arkadiusz Glowacki Eldad Bahat-Treidel Richard Lossy Joachim Würfl Christian Boit Günther Tränkle Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. 217-223 2011 51 Microelectron. Reliab. 2 https://doi.org/10.1016/j.microrel.2010.09.029 db/journals/mr/mr51.html#IvoGBLWBT11

Joachim Würfl Eldad Bahat-Treidel Frank Brunner E. Cho Oliver Hilt Ponky Ivo A. Knauer Paul Kurpas Richard Lossy Matthias Schulz S. Singwald Markus Weyers Rimma Zhytnytska Reliability issues of GaN based high voltage power devices. 1710-1716 2011 51 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2011.07.017 db/journals/mr/mr51.html#WuerflBBCHIKKLSSWZ11

Arkadiusz Glowacki Piotr Laskowski Christian Boit Ponky Ivo Eldad Bahat-Treidel Reza Pazirandeh Richard Lossy Joachim Würfl Günther Tränkle Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. 1211-1215 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.07.022 db/journals/mr/mr49.html#GlowackiLBIBPLWT09

Ole Bethge Christian Boit Frank Brunner Mattia Capriotti Sergey A. Chevtchenko E. Cho H. Christopher Stefano Dalcanale Clément Fleury Manuel Fregolent Stephan Freyer A. Ginolas Arkadiusz Glowacki Oliver Hilt Ponky Ivo Wilfred John A. Klehr A. Knauer Paul Kurpas Suzanne Lancaster Piotr Laskowski A. Liero Richard Lossy Alberto Marcuzzi Gaudenzio Meneghesso Matteo Meneghini Reza Pazirandeh Dionyz Pogany Fabiana Rampazzo Matteo Rigato Isabella Rossetto Carlo De Santi Matthias Schulz Riccardo Silvestri S. Singwald Antonio Stocco Gottfried Strasser Günther Tränkle O. Bahat Treidel Markus Weyers Mihaela Wolf Joachim Würfl Alberto Zanandrea Enrico Zanoni Rimma Zhytnytska