Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.

Dominique Carisetti

Benoit Lambert Nathalie Labat Dominique Carisetti Serge Karboyan Jean-Guy Tartarin Jim Thorpe Laurent Brunel Arnaud Curutchet Nathalie Malbert Eddy Latu-Romain Michel Mermoux Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. 2184-2187 2012 52 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2012.06.100 db/journals/mr/mr52.html#LambertLCKTTBCMLM12

Michele Piazza Christian Dua Mourad Oualli Erwan Morvan Dominique Carisetti Frédéric Wyczisk Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. 1222-1225 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.06.043 db/journals/mr/mr49.html#PiazzaDOMCW09

Laurent Brunel Arnaud Curutchet Christian Dua Serge Karboyan Nathalie Labat Benoit Lambert Eddy Latu-Romain Nathalie Malbert Michel Mermoux Erwan Morvan Mourad Oualli Michele Piazza Jean-Guy Tartarin Jim Thorpe Frédéric Wyczisk