Vertical Channel Transistor (VCT) as Access Transistor for Future 4F<sup>2</sup> DRAM Architecture.

Minrui Hu Daohuan Feng Yi Jiang Yunsong Qiu Yuhong Zheng Harry Kim Jaewoo Kim Jian Chu Guangsu Shao Yucheng Liao Chen Yang Minrui Hu Wenli Zhao Linjiang Xia Jianfeng Xiao Di Ma Yuan Cheng Xiangbo Kong Chao Lin Tianming Li Yongjie Li 0002 Jingheng Meng Kai Shao Yan Wang Xiaoan Yang Xiang Liu Qinghua Han Huiming Li Yanzhe Tang Mingde Liu Eric Wu Xiaoping Li Renrui Huang Mingtang Zhang Long Hou Xuan Pan Xinwen Jin Shuiping Zhao Dh Han Ted Park Deyuan Xiao Chao Zhao Abraham Yoo Vertical Channel Transistor (VCT) as Access Transistor for Future 4F<sup>2</sup> DRAM Architecture. 1-4 2023 IMW https://doi.org/10.1109/IMW56887.2023.10145977 conf/imw2/2023 db/conf/imw2/imw2023.html#FengJQZKKCSLYHZ23 Yuan Cheng Jian Chu Daohuan Feng Dh Han Qinghua Han Long Hou Renrui Huang Yi Jiang Xinwen Jin Harry Kim Jaewoo Kim Xiangbo Kong Huiming Li Tianming Li Xiaoping Li Yongjie Li 0002 Yucheng Liao Chao Lin Mingde Liu Xiang Liu Di Ma Jingheng Meng Xuan Pan Ted Park Yunsong Qiu Guangsu Shao Kai Shao Yanzhe Tang Yan Wang Eric Wu Linjiang Xia Deyuan Xiao Jianfeng Xiao Chen Yang Xiaoan Yang Abraham Yoo Mingtang Zhang Chao Zhao Shuiping Zhao Wenli Zhao Yuhong Zheng