Dynamic aging compensation and Safety measures in Automotive environment.

C. R. Parthasarathy Souhir Mhira Vincent Huard Ahmed Benhassain Florian Cacho Sylvie Naudet Abhishek Jain 0003 C. R. Parthasarathy Alain Bravaix Dynamic aging compensation and Safety measures in Automotive environment. 106-112 2017 IOLTS https://doi.org/10.1109/IOLTS.2017.8046204 conf/iolts/2017 db/conf/iolts/iolts2017.html#MhiraHBCNJPB17 Souhir Mhira Vincent Huard Ahmed Benhassain Florian Cacho David Meyer Sylvie Naudet Abhishek Jain 0003 C. R. Parthasarathy Alain Bravaix Cognitive approach to support dynamic aging compensation. 1-7 2017 ITC https://doi.org/10.1109/TEST.2017.8242042 conf/itc/2017 db/conf/itc/itc2017.html#MhiraHBCMNJPB17 Florian Cacho Ahmed Benhassain Souhir Mhira Ajith Sivadasan Vincent Huard P. Cathelin Vincent Knopik Abhishek Jain 0003 C. R. Parthasarathy Lorena Anghel Activity profiling: Review of different solutions to develop reliable and performant design. 47-50 2016 IOLTS https://doi.org/10.1109/IOLTS.2016.7604670 conf/iolts/2016 db/conf/iolts/iolts2016.html#CachoBMSHCKJPA16 Ahmed Benhassain Florian Cacho Vincent Huard M. Saliva Lorena Anghel C. R. Parthasarathy Abhishek Jain 0003 Fabien Giner Timing in-situ monitors: Implementation strategy and applications results. 1-4 2015 CICC https://doi.org/10.1109/CICC.2015.7338418 conf/cicc/2015 db/conf/cicc/cicc2015.html#BenhassainCHSAP15 C. R. Parthasarathy Alain Bravaix Chloe Guérin Mickael Denais Vincent Huard Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. 191-200 2007 conf/patmos/2007 PATMOS https://doi.org/10.1007/978-3-540-74442-9_19 db/conf/patmos/patmos2007.html#ParthasarathyBGDH07

Vincent Huard Mickael Denais C. R. Parthasarathy NBTI degradation: From physical mechanisms to modelling. 1-23 2006 46 Microelectron. Reliab. 1 https://doi.org/10.1016/j.microrel.2005.02.001 db/journals/mr/mr46.html#HuardDP06

C. R. Parthasarathy Mickael Denais Vincent Huard G. Ribes David Roy 0001 Chloe Guérin F. Perrier E. Vincent Alain Bravaix Designing in reliability in advanced CMOS technologies. 1464-1471 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.012 db/journals/mr/mr46.html#ParthasarathyDHRRGPVB06

Vincent Huard Mickael Denais F. Perrier Nathalie Revil C. R. Parthasarathy Alain Bravaix E. Vincent A thorough investigation of MOSFETs NBTI degradation. 83-98 2005 45 Microelectron. Reliab. 1 https://doi.org/10.1016/j.microrel.2004.04.027 db/journals/mr/mr45.html#HuardDPRPBV05

Alain Bravaix Didier Goguenheim Mickael Denais Vincent Huard C. R. Parthasarathy F. Perrier Nathalie Revil E. Vincent Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. 1370-1375 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.023 db/journals/mr/mr45.html#BravaixGDHPPRV05

Lorena Anghel Sidi Ahmed BenhassainAhmed Benhassain Alain Bravaix Florian Cacho P. Cathelin Mickael Denais Fabien Giner Didier Goguenheim Chloe Guérin Vincent Huard Abhishek Jain 0003 Vincent Knopik David Meyer Souhir Mhira Sylvie Naudet F. Perrier Nathalie Revil G. Ribes David Roy 0001 M. Saliva Ajith Sivadasan E. Vincent