A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.

Barry P. Linder Ernest Y. Wu Ron Bolam Baozhen Li Tian Shen Barry P. Linder Griselda Bonilla Miaomiao Wang 0006 Dechao Guo A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. 2 2022 IRPS https://doi.org/10.1109/IRPS48227.2022.9764541 conf/irps/2022 db/conf/irps/irps2022.html#WuBLSLBWG22 Andrew Kim Ernest Y. Wu Baozhen Li Barry P. Linder Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. 1-5 2019 IRPS https://doi.org/10.1109/IRPS.2019.8720572 conf/irps/2019 db/conf/irps/irps2019.html#KimWLL19 Elnatan Mataev James H. Stathis Giuseppe La Rosa Barry P. Linder Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery. 1-5 2019 IRPS https://doi.org/10.1109/IRPS.2019.8720442 conf/irps/2019 db/conf/irps/irps2019.html#MataevSRL19 Andrew Kim Baozhen Li Barry P. Linder Transient self-heating modeling and simulations of back-end-of-line interconnects. 2-1 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353672 conf/irps/2018 db/conf/irps/irps2018.html#KimLL18 Baozhen Li Andrew Kim Paul McLaughlin Barry P. Linder Cathryn Christiansen Electromigration characteristics of power grid like structures. 4 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353599 conf/irps/2018 db/conf/irps/irps2018.html#LiKMLC18 Franco Stellari Alan J. Weger Keith A. Jenkins Giuseppe La Rosa Barry P. Linder Peilin Song Estimating transistor channel temperature using time-resolved and time-integrated NIR emission. 6 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353625 conf/irps/2018 db/conf/irps/irps2018.html#StellariWJRLS18 Franco Stellari Keith A. Jenkins Alan J. Weger Barry P. Linder Peilin Song Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements. 2 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112672 conf/irps/2015 db/conf/irps/irps2015.html#StellariJWLS15 Ernest Y. Wu James H. Stathis Baozhen Li Barry P. Linder Kai Zhao Griselda Bonilla A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). 2 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112669 conf/irps/2015 db/conf/irps/irps2015.html#WuSLLZB15 Emily Ray Barry P. Linder Raphael Robertazzi Kevin Stawiasz Alan J. Weger Emmanuel Yashchin James H. Stathis Peilin Song Analyzing path delays for accelerated testing of logic chips. 6 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112764 conf/irps/2015 db/conf/irps/irps2015.html#RayLRSWYSS15 Barry P. Linder Eduard Cartier S. Krishnan Ernest Y. Wu Improving and optimizing reliability in future technologies with high-κ dielectrics. 1-4 2013 VLSI-DAT https://doi.org/10.1109/VLDI-DAT.2013.6533828 conf/vlsi-dat/2013 db/conf/vlsi-dat/vlsi-dat2013.html#LinderCKW13

James H. Stathis Rosana Rodríguez Barry P. Linder Circuit implications of gate oxide breakdown. 1193-1197 2003 43 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(03)00171-9 db/journals/mr/mr43.html#StathisRL03

James H. Stathis Barry P. Linder Rosana Rodríguez Salvatore Lombardo Reliability of ultra-thin oxides in CMOS circuits. 1353-1360 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00242-7 db/journals/mr/mr43.html#StathisLRL03

Rosana Rodríguez James H. Stathis Barry P. Linder Rajiv V. Joshi Ching-Te Chuang Influence and model of gate oxide breakdown on CMOS inverters. 1439-1444 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00247-6 db/journals/mr/mr43.html#RodriguezSLJC03

Rosana Rodríguez James H. Stathis Barry P. Linder Steven P. Kowalczyk Ching-Te Chuang Rajiv V. Joshi Gregory A. Northrop Kerry Bernstein Azeez J. Bhavnagarwala Salvatore Lombardo Analysis of the effect of the gate oxide breakdown on SRAM stability. 1445-1448 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00166-X db/journals/mr/mr42.html#RodriguezSLKCJNBBL02

Salvatore Lombardo James H. Stathis Barry P. Linder Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. 1481-1484 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00174-9 db/journals/mr/mr42.html#LombardoSL02

Kerry Bernstein Azeez BhavnagarwalaAzeez J. Bhavnagarwala Ronald J. BolamRon Bolam Griselda Bonilla Eduard Cartier Cathryn Christiansen Ching-Te Chuang Dechao Guo Keith A. Jenkins Rajiv V. Joshi Andrew Kim Steven P. Kowalczyk S. Krishnan Baozhen Li Salvatore Lombardo Elnatan Mataev Paul McLaughlin Gregory A. Northrop Emily Ray Raphael Robertazzi Rosana Rodríguez Giuseppe La Rosa Tian Shen Peilin Song James H. Stathis Kevin Stawiasz Franco Stellari Miaomiao Wang 0006 Alan J. Weger Ernest Y. Wu Emmanuel Yashchin Kai Zhao