J. C. Vildeuil
Cédric Leyris
Frédéric Martinez
Alain Hoffmann
M. Valenza
J. C. Vildeuil
N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis.
41-45
2007
47
Microelectron. Reliab.
1
https://doi.org/10.1016/j.microrel.2006.02.010
db/journals/mr/mr47.html#LeyrisMHVV07
G. Néau
Frédéric Martinez
M. Valenza
J. C. Vildeuil
E. Vincent
Frédéric Boeuf
F. Payet
K. Rochereau
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.
567-572
2007
47
Microelectron. Reliab.
4-5
https://doi.org/10.1016/j.microrel.2007.01.079
db/journals/mr/mr47.html#NeauMVVVBPR07
Cédric Leyris
Frédéric Martinez
M. Valenza
Alain Hoffmann
J. C. Vildeuil
Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization.
573-576
2007
47
Microelectron. Reliab.
4-5
https://doi.org/10.1016/j.microrel.2007.01.034
db/journals/mr/mr47.html#LeyrisMVHV07
P. Benoit
Jérémy Raoult
C. Delseny
Fabien Pascal
L. Snadny
J. C. Vildeuil
M. Marin
B. Martinet
D. Cottin
Olivier Noblanc
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors.
1800-1806
2005
45
Microelectron. Reliab.
9-11
https://doi.org/10.1016/j.microrel.2005.07.097
db/journals/mr/mr45.html#BenoitRDPSVMMCN05
M. Marin
Y. Akue Allogo
M. de Murcia
P. Llinares
J. C. Vildeuil
Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise.
1077-1085
2004
44
Microelectron. Reliab.
7
https://doi.org/10.1016/j.microrel.2004.02.010
db/journals/mr/mr44.html#MarinAMLV04
Y. Akue Allogo
P. Benoit
Frédéric Boeuf
D. Cottin
C. Delseny
Alain Hoffmann
Cédric Leyris
P. Llinares
M. Marin
B. Martinet
Frédéric Martinez
M. de Murcia
G. Néau
Olivier Noblanc
Fabien Pascal
F. Payet
Jérémy Raoult
K. Rochereau
L. Snadny
M. Valenza
E. Vincent