Study of forward AC stress degradation of GaN-on-Si Schottky diodes.

Thomas Lorin

Thomas Lorin William Vandendaele Romain Gwoziecki Charlotte Gillot Jérome Biscarrat Gérard Ghibaudo Fred Gaillard Study of forward AC stress degradation of GaN-on-Si Schottky diodes. 641-644 2018 88-90 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2018.07.103 db/journals/mr/mr88.html#LorinVGGBGG18

William Vandendaele Xavier Garros Thomas Lorin Erwan Morvan Alphonse Torres René Escoffier Marie-Anne Jaud Marc Plissonnier Fred Gaillard A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. 4 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353580 conf/irps/2018 db/conf/irps/irps2018.html#VandendaeleGLMT18 William Vandendaele Thomas Lorin Romain Gwoziecki Yannick Baines Jérome Biscarrat Marie-Anne Jaud Charlotte Gillot Matthew Charles Marc Plissonnier Gilles Reimbold On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. 126-129 2017 ESSDERC https://doi.org/10.1109/ESSDERC.2017.8066608 conf/essderc/2017 db/conf/essderc/essderc2017.html#VandendaeleLGBB17 Yannick Baines Jérome Biscarrat Matthew Charles René Escoffier Fred Gaillard Xavier Garros Gérard Ghibaudo Charlotte Gillot Romain Gwoziecki Marie-Anne Jaud Erwan Morvan Marc Plissonnier Gilles Reimbold Alphonse Torres William Vandendaele