STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability.

Hussein Bazzi Hassen Aziza Jérémy Postel-Pellerin Hussein Bazzi Mathieu Moreau Adnan Harb STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability. 3532-3536 2022 ISCAS https://doi.org/10.1109/ISCAS48785.2022.9937716 conf/iscas/2022 db/conf/iscas/iscas2022.html#AzizaPBMH22

Hussein Bazzi Hassen Aziza Mathieu Moreau Adnan Harb Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability. 515-532 2021 37 J. Electron. Test. 4 https://doi.org/10.1007/s10836-021-05965-x db/journals/et/et37.html#BazziAMH21

Hussein Bazzi Jérémy Postel-Pellerin Hassen Aziza Mathieu Moreau Adnan Harb Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation. 1-4 2020 DFT https://doi.org/10.1109/DFT50435.2020.9250726 conf/dft/2020 db/conf/dft/dft2020.html#BazziPAMH20 Hussein Bazzi Hassen Aziza Mathieu Moreau Adnan Harb Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology. 1-6 2020 DTIS https://doi.org/10.1109/DTIS48698.2020.9081153 conf/dtis/2020 db/conf/dtis/dtis2020.html#BazziAMH20 Hassen Aziza Hussein Bazzi Jérémy Postel-Pellerin Pierre Canet Mathieu Moreau Adnan Harb An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. 1-5 2019 DTIS https://doi.org/10.1109/DTIS.2019.8735057 conf/dtis/2019 db/conf/dtis/dtis2019.html#AzizaBPCMH19 Jérémy Postel-Pellerin Hussein Bazzi Hassen Aziza Pierre Canet Mathieu Moreau Vincenzo Della Marca Adnan Harb True random number generation exploiting SET voltage variability in resistive RAM memory arrays. 1-5 2019 NVMTS https://doi.org/10.1109/NVMTS47818.2019.9043369 conf/nvmts/2019 db/conf/nvmts/nvmts2019.html#Postel-Pellerin19 Hussein Bazzi Adnan Harb Hassen Aziza Mathieu Moreau Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology. 390-393 2018 ICCA https://doi.org/10.1109/COMAPP.2018.8460422 conf/icca3/2018 db/conf/icca3/icca2018.html#BazziHAM18 Hussein Bazzi Adnan Harb Hassen Aziza Mathieu Moreau Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology. 228-231 2018 ICM https://doi.org/10.1109/ICM.2018.8704119 conf/icm2/2018 db/conf/icm2/icm2018.html#BazziHAM18 Hussein Bazzi Mohammad Abou Chanine Ali Mohsen Adnan Harb A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology. 1-4 2017 ICM https://doi.org/10.1109/ICM.2017.8268826 conf/icm2/2017 db/conf/icm2/icm2017.html#BazziCMH17 Hassen Aziza Pierre Canet Mohammad Abou Chanine Adnan Harb Vincenzo Della Marca Ali Mohsen Mathieu Moreau Jérémy Postel-Pellerin