A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS.

Quang Huy Le Victor Lasserre Sarah Koop-Brinkmann Michele Caruso Daniele Dal Maistro Giovanni Volpato Quang Huy Le Thomas Kämpfe Christian Ziegler Finn Stapelfeldt Vadim Issakov A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS. 146-149 2024 BCICTS https://doi.org/10.1109/BCICTS59662.2024.10745661 conf/bcicts/2024 db/conf/bcicts/bcicts2024.html#LasserreKCMVLKZ24 Sukhrob Abdulazhanov Quang Huy Le Dang Khoa Huynh David Lehninger Thomas Kämpfe Gerald Gerlach Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. 1-2 2023 DRC https://doi.org/10.1109/DRC58590.2023.10187025 conf/drc/2023 db/conf/drc/drc2023.html#AbdulazhanovLHLKG23 Sukhrob Abdulazhanov Quang Huy Le Dang Khoa Huynh Maximilian Lederer Yannick Raffel Kai Ni 0004 Xunzhao Yin Thomas Kämpfe Gerald Gerlach Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications. 113-116 2023 ESSDERC https://doi.org/10.1109/ESSDERC59256.2023.10268544 conf/essderc/2023 db/conf/essderc/essderc2023.html#AbdulazhanovLHLRNYKG23 Sukhrob Abdulazhanov Dang Khoa Huynh Quang Huy Le David Lehninger Thomas Kämpfe Gerald Gerlach BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications. 253-256 2022 ESSDERC https://doi.org/10.1109/ESSDERC55479.2022.9947182 conf/essderc/2022 db/conf/essderc/essderc2022.html#AbdulazhanovHLLKG22 Zhixing Zhao Steffen Lehmann Wei Lun Oo Amit Kumar Sahoo Shafi Syed Quang Huy Le Dang Khoa Huynh Talha Chohan Dirk Utess Dominik Kleimaier Maciej Wiatr Sabine Kolodinski Jerome Mazurier Jan Hoentschel Andreas Knorr Ned Cahoon Stefan Kneitz 22FDSOI device towards RF and mmWave applications. 1-6 2021 BCICTS https://doi.org/10.1109/BCICTS50416.2021.9682480 conf/bcicts/2021 db/conf/bcicts/bcicts2021.html#ZhaoLOSSLHCUKWK21 Quang Huy Le Dang Khoa Huynh Defu Wang Thomas Kämpfe Zhixing Zhao Steffen Lehmann Assessment of a Thick-Oxide Transistor from the 22FDX® Platform for 5G NR sub-6 GHz FEMs. 7-10 2019 5G World Forum https://doi.org/10.1109/5GWF.2019.8911632 conf/5gwf/2019 db/conf/5gwf/5gwf2019.html#LeHWKZL19 Quang Huy Le Dang Khoa Huynh Defu Wang Thomas Kämpfe Steffen Lehmann DC-110 GHz Characterization of 22FDX<sup>®</sup> FDSOI Transistors for 5G Transmitter Front-End. 218-221 2019 ESSDERC https://doi.org/10.1109/ESSDERC.2019.8901762 conf/essderc/2019 db/conf/essderc/essderc2019.html#LeHWKL19 Sukhrob Abdulazhanov Ned Cahoon Michele Caruso Talha Chohan Gerald Gerlach Jan Hoentschel Dang Khoa Huynh Vadim Issakov Thomas Kämpfe Dominik Kleimaier Stefan Kneitz Andreas Knorr Sabine Kolodinski Sarah Koop-Brinkmann Victor Lasserre Maximilian Lederer Steffen Lehmann David Lehninger Daniele Dal Maistro Jerome Mazurier Kai Ni 0004 Wei Lun Oo Yannick Raffel Amit Kumar Sahoo Finn-Niclas StapelfeldtFinn Stapelfeldt Shafi Syed Dirk Utess Giovanni Volpato Defu Wang Maciej Wiatr Xunzhao Yin Zhixing Zhao Christian Ziegler