Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices.

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G. Bajpai J. M. Bewley H. Bu C. Child C. Durfee S. Emans N. Fokas Y. Fukuzaki J. Gao Oleg Gluschenkov D. Guo Z. Han Mohammed HasanuzzamanM. Hasanuzzaman Dongjian He X. Jin R. Krishnan Y. Kuang E. Leobandung B. Li Jiancheng Li J. Luo H. Miki R. Mo S. Mochizuki K. Okada L. Qin R. Robison S. Siddiqui D. Sohn T. Standaert James H. Stathis S. D. Suk Yasir Sulehria K. Tomida R. Vega M. Wang Jianfei Wu X. Zhao H. Zhou