<?xml version="1.0"?>
<dblpperson name="Keisuke Ohdaira" pid="211/6366" n="2">
<person key="homepages/211/6366" mdate="2018-01-02">
<author pid="211/6366">Keisuke Ohdaira</author>
</person>
<r><article key="journals/mr/KomatsuYMO18" mdate="2020-10-26">
<author pid="218/9947">Yutaka Komatsu</author>
<author orcid="0000-0002-2761-8308" pid="211/6307">Seira Yamaguchi</author>
<author pid="22/3686">Atsushi Masuda</author>
<author orcid="0000-0003-0667-4922" pid="211/6366">Keisuke Ohdaira</author>
<title>Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation.</title>
<pages>127-133</pages>
<year>2018</year>
<volume>84</volume>
<journal>Microelectron. Reliab.</journal>
<ee>https://doi.org/10.1016/j.microrel.2018.03.018</ee>
<url>db/journals/mr/mr84.html#KomatsuYMO18</url>
</article>
</r>
<r><article key="journals/mr/NishikawaYO17" mdate="2020-10-26">
<author pid="211/6501">Naoyuki Nishikawa</author>
<author orcid="0000-0002-2761-8308" pid="211/6307">Seira Yamaguchi</author>
<author orcid="0000-0003-0667-4922" pid="211/6366">Keisuke Ohdaira</author>
<title>Direct observation of changes in the effective minority-carrier lifetime of SiN<sub>x</sub>-passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests.</title>
<pages>91-95</pages>
<year>2017</year>
<volume>79</volume>
<journal>Microelectron. Reliab.</journal>
<ee>https://doi.org/10.1016/j.microrel.2017.10.012</ee>
<url>db/journals/mr/mr79.html#NishikawaYO17</url>
</article>
</r>
<coauthors n="4" nc="1">
<co c="0"><na f="k/Komatsu:Yutaka" pid="218/9947">Yutaka Komatsu</na></co>
<co c="0"><na f="m/Masuda:Atsushi" pid="22/3686">Atsushi Masuda</na></co>
<co c="0"><na f="n/Nishikawa:Naoyuki" pid="211/6501">Naoyuki Nishikawa</na></co>
<co c="0"><na f="y/Yamaguchi:Seira" pid="211/6307">Seira Yamaguchi</na></co>
</coauthors>
</dblpperson>

