Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology.

Kiran V. Chatty

Tommaso Cilento M. Schenkel C. Yun R. Mishra Junjun Li Kiran V. Chatty Robert Gauthier 0002 Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology. 1367-1372 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.132 db/journals/mr/mr50.html#CilentoSYMLCG10

Adrien Ille Wolfgang Stadler Thomas Pompl Harald Gossner Tilo Brodbeck Kai Esmark Philipp Riess David Alvarez Kiran V. Chatty Robert Gauthier 0002 Alain Bravaix Reliability aspects of gate oxide under ESD pulse stress. 1407-1416 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.054 db/journals/mr/mr49.html#IlleSPGBERACGB09

David Alvarez Kiran V. Chatty Christian Russ Michel J. Abou-Khalil Junjun Li Robert Gauthier 0002 Kai Esmark Ralph Halbach Christopher Seguin Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. 1417-1423 2009 49 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2009.06.051 db/journals/mr/mr49.html#AlvarezCRALGEHS09

Ciaran J. Brennan Shunhua Chang Min Woo Kiran V. Chatty Robert Gauthier 0002 Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs. 1030-1035 2007 47 Microelectron. Reliab. 7 https://doi.org/10.1016/j.microrel.2006.11.009 db/journals/mr/mr47.html#BrennanCWCG07

Ciaran J. Brennan Kiran V. Chatty Jeff Sloan Paul Dunn Mujahid Muhammad Robert Gauthier 0002 Design automation to suppress cable discharge event (CDE) induced latchup in 90 nm CMOS ASICs. 1069-1073 2007 47 Microelectron. Reliab. 7 https://doi.org/10.1016/j.microrel.2006.11.008 db/journals/mr/mr47.html#BrennanCSDMG07

David Alvarez Michel J. Abou-Khalil Christian Russ Kiran V. Chatty Robert Gauthier 0002 D. Kontos Junjun Li Christopher Seguin Ralph Halbach Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. 1597-1602 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.041 db/journals/mr/mr46.html#AlvarezARCGKLSH06

Franco Stellari Peilin Song Moyra K. McManus Alan J. Weger Robert Gauthier 0002 Kiran V. Chatty Mujahid Muhammad Pia N. Sanda Philip Wu Steven C. Wilson Latchup Analysis Using Emission Microscopy. 1603-1608 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00281-6 db/journals/mr/mr43.html#StellariSMWGCMSWW03

Franco Stellari Peilin Song Moyra K. McManus Robert Gauthier 0002 Alan J. Weger Kiran V. Chatty Mujahid Muhammad Pia N. Sanda Optical and Electrical Testing of Latchup in I/O Interface Circuits. 236-245 2003 conf/itc/2003 ITC https://doi.org/10.1109/TEST.2003.1270845 https://doi.ieeecomputersociety.org/10.1109/TEST.2003.1270845 db/conf/itc/itc2003.html#StellariSMGWCMS03 Michel J. Abou-Khalil David Alvarez Alain Bravaix Ciaran J. Brennan Tilo Brodbeck Shunhua Chang Tommaso Cilento Paul Dunn Kai Esmark Robert Gauthier 0002 Harald Gossner Ralph Halbach Adrien Ille D. Kontos Junjun Li Moyra K. McManus R. Mishra Mujahid Muhammad Thomas Pompl Philipp Riess Christian Russ Pia N. Sanda M. Schenkel Christopher Seguin Jeff Sloan Peilin Song Wolfgang Stadler Franco Stellari Alan J. Weger Steven C. Wilson Min Woo Philip Wu C. Yun