Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology.

Sébastien Haendler Paul Devoge Hassen Aziza Philippe Lorenzini Franck Julien Abderrezak Marzaki Alexandre Malherbe Marc Mantelli Thomas Sardin Sébastien Haendler Arnaud Régnier Stephan Niel Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology. 1-5 2021 DTIS https://doi.org/10.1109/DTIS53253.2021.9505137 conf/dtis/2021 db/conf/dtis/dtis2021.html#DevogeALJMMMSHR21 Franck Arnaud Sébastien Haendler Sylvain Clerc Rossella Ranica Anna Gandolfo Olivier Weber 28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. 7-10 2019 ESSCIRC https://doi.org/10.1109/ESSCIRC.2019.8902913 conf/esscirc/2019 db/conf/esscirc/esscirc2019.html#ArnaudHCRGW19 Franck Arnaud Sébastien Haendler Sylvain Clerc Rossella Ranica Anna Gandolfo Olivier Weber 28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. 7-10 2019 ESSDERC https://doi.org/10.1109/ESSDERC.2019.8901691 conf/essderc/2019 db/conf/essderc/essderc2019.html#ArnaudHCRGW19 Rania Lajmi Florian Cacho O. David Jean-Pierre Blanc Emmanuel Rouat Sébastien Haendler Ph. Benech Estelle Lauga-Larroze Sylvain Bourdel Reliability assessment of 4GSP/s interleaved SAR ADC. 5-1 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353658 conf/irps/2018 db/conf/irps/irps2018.html#LajmiCDBRHBLB18 Marcelino Seif Fabien Pascal Bruno Sagnes J. Elbeyrouthy Alain Hoffmann Sébastien Haendler Pascal Chevalier 0002 Daniel Gloria Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. 1-4 2017 ICM https://doi.org/10.1109/ICM.2017.8268847 conf/icm2/2017 db/conf/icm2/icm2017.html#SeifPSEHHCG17 Rossella Ranica Nicolas Planes Vincent Huard Olivier Weber Daniel Noblet Damien Croain Fabien Giner Sylvie Naudet P. Mergault S. Ibars A. Villaret Maryline Parra Sébastien Haendler M. Quoirin Florian Cacho C. Julien F. Terrier Lorenzo Ciampolini David Turgis Christophe Lecocq Franck Arnaud 28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. 1-2 2016 VLSI Circuits https://doi.org/10.1109/VLSIC.2016.7573512 conf/vlsic/2016 db/conf/vlsic/vlsic2016.html#RanicaPHWNCGNMI16 Christoforos G. Theodorou Eleftherios G. Ioannidis Sébastien Haendler Nicolas Planes Emmanuel Josse Charalambos A. Dimitriadis Gérard Ghibaudo New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. 1 2015 IRPS https://doi.org/10.1109/IRPS.2015.7112833 conf/irps/2015 db/conf/irps/irps2015.html#TheodorouIHPJDG15

Marcelino Seif Fabien Pascal Bruno Sagnes Alain Hoffmann Sébastien Haendler Pascal Chevalier 0002 Daniel Gloria Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. 2171-2175 2014 54 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2014.07.027 db/journals/mr/mr54.html#SeifPSHHCG14

Eleftherios G. Ioannidis Sébastien Haendler Christoforos G. Theodorou Nicolas Planes Charalabos A. Dimitriadis Gérard Ghibaudo Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. 214-217 2014 ESSDERC https://doi.org/10.1109/ESSDERC.2014.6948798 conf/essderc/2014 db/conf/essderc/essderc2014.html#IoannidisHTPDG14 Marcelino Seif Fabien Pascal Bruno Sagnes Alain Hoffmann Sébastien Haendler Pascal Chevalier 0002 Daniel Gloria Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. 373-376 2014 ESSDERC https://doi.org/10.1109/ESSDERC.2014.6948838 conf/essderc/2014 db/conf/essderc/essderc2014.html#SeifPSHHCG14 Vivek Asthana Malathi Kar Jean Jimenez Jean-Philippe Noel Sébastien Haendler Philippe Galy Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control. 415-418 2013 ESSCIRC https://doi.org/10.1109/ESSCIRC.2013.6649161 conf/esscirc/2013 db/conf/esscirc/esscirc2013.html#AsthanaKJNHG13 Vivek Asthana Malathi Kar Jean Jimenez Sébastien Haendler Philippe Galy 6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology. 89-92 2013 ICICDT https://doi.org/10.1109/ICICDT.2013.6563310 conf/icicdt/2013 db/conf/icicdt/icicdt2013.html#AsthanaKJHG13 Christoforos G. Theodorou Eleftherios G. Ioannidis Sébastien Haendler Nicolas Planes Franck Arnaud Jalal Jomaah Charalambos A. Dimitriadis Gérard Ghibaudo Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. 334-337 2012 ESSDERC https://doi.org/10.1109/ESSDERC.2012.6343401 conf/essderc/2012 db/conf/essderc/essderc2012.html#TheodorouIHPAJDG12 Claire Fenouillet-Béranger Pierre Perreau S. Denorme L. Tosti François Andrieu Olivier Weber S. Barnola C. Arvet Y. Campidelli Sébastien Haendler R. Beneyton C. Perrot C. de Buttet P. Gros Loan Pham-Nguyen F. Leverd P. Gouraud F. Abbate F. Baron Alphonse Torres C. Laviron L. Pinzelli J. Vetier C. Borowiak A. Margain D. Delprat F. Boedt Konstantin Bourdelle Bich-Yen Nguyen Olivier Faynot Thomas Skotnicki Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. 88-91 2009 ESSCIRC https://doi.org/10.1109/ESSCIRC.2009.5325994 conf/esscirc/2009 db/conf/esscirc/esscirc2009.html#Fenouillet-Beranger09

François Dieudonné Sébastien Haendler Jalal Jomaah Francis Balestra Low frequency noise in 0.12 mum partially and fully depleted SOI technology. 243-248 2003 43 Microelectron. Reliab. 2 https://doi.org/10.1016/S0026-2714(02)00279-2 db/journals/mr/mr43.html#DieudonneHJB03

Sébastien Haendler Jalal Jomaah Gérard Ghibaudo Francis Balestra Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. 855-860 2001 41 Microelectron. Reliab. 6 https://doi.org/10.1016/S0026-2714(01)00021-X db/journals/mr/mr41.html#HaendlerJGB01

O. Rozeau Sébastien Haendler Jalal Jomaah J. Boussey Francis Balestra C. Raynaud J. L. Pelloie 0.25 μm SOI technologies performance for low-power radio-frequency applications. 45-48 2000 ICECS https://doi.org/10.1109/ICECS.2000.911481 conf/icecsys/2000 db/conf/icecsys/icecsys2000.html#RozeauHJBBRP00 F. Abbate François Andrieu Franck Arnaud C. Arvet Vivek Asthana Hassen Aziza Francis Balestra S. Barnola F. Baron Ph. Benech R. Beneyton Jean-Pierre Blanc F. Boedt C. Borowiak Sylvain Bourdel Konstantin Bourdelle J. Boussey C. de Buttet Florian Cacho Y. Campidelli Pascal Chevalier 0002 Lorenzo Ciampolini Sylvain Clerc Damien Croain O. David D. Delprat S. Denorme Paul Devoge François Dieudonné C. A. DimitriadisCharalambos A. Dimitriadis Charalabos A. Dimitriadis J. Elbeyrouthy Olivier Faynot Claire Fenouillet-Béranger Philippe Galy Anna Gandolfo Gérard Ghibaudo Fabien Giner Daniel Gloria P. Gouraud P. Gros Alain Hoffmann Vincent Huard S. Ibars Eleftherios G. Ioannidis Jean Jimenez Jalal Jomaah Emmanuel Josse C. Julien Franck Julien Malathi Kar Rania Lajmi Estelle LaugaEstelle Lauga-Larroze C. Laviron Christophe Lecocq F. Leverd Philippe Lorenzini Alexandre Malherbe Marc Mantelli A. Margain Abderrezak Marzaki P. Mergault Sylvie Naudet Bich-Yen Nguyen Stephan Niel Daniel Noblet Jean-Philippe NoëlJean-Philippe Noel Maryline Parra Fabien Pascal J. L. Pelloie Pierre Perreau C. Perrot Loan Pham-Nguyen L. Pinzelli Nicolas Planes M. Quoirin Rossella Ranica C. Raynaud Arnaud Régnier Emmanuel Rouat O. Rozeau Bruno Sagnes Thomas Sardin Marcelino Seif Thomas Skotnicki F. Terrier Christoforos G. Theodorou Alphonse Torres L. Tosti David Turgis J. Vetier A. Villaret Olivier Weber