A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications.

Frederic Monsieur Pascal Chevalier 0002 Florian Cacho C. Durand N. Derrier V. Millon Frederic Monsieur A. Gauthier P. Billy Sébastien Fregonese Thomas Zimmer H. Audouin Michel Buczko Didier Céli C. Deglise-Favre Cheikh Diouf O. Foissey M. Hello N. Guitard S. Madassamy S. Ramirez-Ruiz C. Renard F. Sonnerat V. Yon D. Gloria G. Waltisperger A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. 13-17 2024 BCICTS https://doi.org/10.1109/BCICTS59662.2024.10745707 conf/bcicts/2024 db/conf/bcicts/bcicts2024.html#0002CDDMMGBFZAB24 S. Crémer N. Pelloux F. Gianesello Y. Mourier G. Haury Tulio Chaves de Albuquerque Frederic Monsieur H. Audouin C. A. Legrand C. Diouf J. Azevedo Goncalves C. Belem Goncalves C. Durand N. Vulliet L. Berthier Emeline Souchier P. Garcia S. Jan M. Hello M. L. Rellier Patrick Scheer B. Duriez Xavier Garros T. Bordignon F. Paillardet Pascal Chevalier 0002 40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. 101-104 2023 ESSDERC https://doi.org/10.1109/ESSDERC59256.2023.10268566 conf/essderc/2023 db/conf/essderc/essderc2023.html#CremerPGMHAMALDGGDVBSGJHRSDGBPC23 C. Doyen V. Yon Xavier Garros Luigi Basset Tadeu Mota Frutuoso C. Dagon Cheikh Diouf X. Federspiel V. Millon Frederic Monsieur C. Pribat David Roy 0001 Insight Into HCI Reliability on I/O Nitrided Devices. 1-5 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117681 conf/irps/2023 db/conf/irps/irps2023.html#DoyenYGBFDDFMMPR23 Tidjani Garba-Seybou Xavier Federspiel Frederic Monsieur Mathieu Sicre Florian Cacho Joycelyn Hai Alain Bravaix Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. 1-8 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117725 conf/irps/2023 db/conf/irps/irps2023.html#GarbaSeybouFMSCHB23

Maxime Penzes S. Dudit Frederic Monsieur Luca Silvestri F. Nallet D. Lewis P. Perdu Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies. 227-232 2017 76-77 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2017.07.027 db/journals/mr/mr76.html#PenzesDMSNLP17

Giacomo Garegnani Vincent Fiori Gilles Gouget Frederic Monsieur Clément Tavernier Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. 90-96 2016 63 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.03.007 db/journals/mr/mr63.html#GaregnaniFGMT16

Frederic Monsieur Yvan Denis Denis Rideau Vincent Quenette Gilles Gouget Clément Tavernier Hervé Jaouen Gérard Ghibaudo Joris Lacord The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. 254-257 2014 ESSDERC https://doi.org/10.1109/ESSDERC.2014.6948808 conf/essderc/2014 db/conf/essderc/essderc2014.html#MonsieurDRQGTJGL14 Raúl Andrés Bianchi Christine Raynaud Floria Blanchet Frederic Monsieur Olivier Noblanc High voltage devices in advanced CMOS technologies. 363-370 2009 CICC https://doi.org/10.1109/CICC.2009.5280839 conf/cicc/2009 db/conf/cicc/cicc2009.html#BianchiRBMN09

Malick Diop Nathalie Revil M. Marin Frederic Monsieur Pascal Chevalier 0002 Gérard Ghibaudo Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. 1198-1201 2008 48 Microelectron. Reliab. 8-9 https://doi.org/10.1016/j.microrel.2008.06.045 db/journals/mr/mr48.html#DiopRMMCG08

D. Lachenal Alain Bravaix Frederic Monsieur Yannick Rey-Tauriac Degradation mechanism understanding of NLDEMOS SOI in RF applications. 1634-1638 2007 47 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2007.07.024 db/journals/mr/mr47.html#LachenalBMR07

G. Ribes S. Bruyère Mickael Denais Frederic Monsieur Vincent Huard David Roy 0001 Gérard Ghibaudo Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. 1842-1854 2005 45 Microelectron. Reliab. 12 https://doi.org/10.1016/j.microrel.2005.03.009 db/journals/mr/mr45.html#RibesBDMHRG05

Frederic Monsieur E. Vincent Vincent Huard S. Bruyère David Roy 0001 Thomas Skotnicki G. Pananakakis Gérard Ghibaudo On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. 1199-1202 2003 43 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(03)00172-0 db/journals/mr/mr43.html#MonsieurVHBRSPG03

G. Ribes S. Bruyère Frederic Monsieur David Roy 0001 Vincent Huard New insights into the change of voltage acceleration and temperature activation of oxide breakdown. 1211-1214 2003 43 Microelectron. Reliab. 8 https://doi.org/10.1016/S0026-2714(03)00174-4 db/journals/mr/mr43.html#RibesBMRH03

David Roy 0001 S. Bruyère E. Vincent Frederic Monsieur Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. 1497-1500 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00177-4 db/journals/mr/mr42.html#RoyBVM02

Frederic Monsieur E. Vincent David Roy 0001 S. Bruyère G. Pananakakis Gérard Ghibaudo Gate oxide Reliability assessment optimization. 1505-1508 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00179-8 db/journals/mr/mr42.html#MonsieurVRBPG02

Frederic Monsieur E. Vincent G. Pananakakis Gérard Ghibaudo Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. 1035-1039 2001 41 Microelectron. Reliab. 7 https://doi.org/10.1016/S0026-2714(01)00064-6 db/journals/mr/mr41.html#MonsieurVPG01

Frederic Monsieur E. Vincent David Roy 0001 S. Bruyère G. Pananakakis Gérard Ghibaudo Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. 1295-1300 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#MonsieurVRBPG01 https://doi.org/10.1016/S0026-2714(01)00183-4

M. Fadlallah Arkadiusz Szewczyk C. Giannakopoulos Bogdan Cretu Frederic Monsieur T. Devoivre Jalal Jomaah Gérard Ghibaudo Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. 1361-1366 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#FadlallahSGCMDJG01 https://doi.org/10.1016/S0026-2714(01)00141-X

S. Bruyère Frederic Monsieur David Roy 0001 E. Vincent Gérard Ghibaudo Failures in ultrathin oxides: Stored energy or carrier energy driven? 1367-1372 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#BruyereMRVG01 https://doi.org/10.1016/S0026-2714(01)00142-1 https://www.wikidata.org/entity/Q126553953

Tulio Chaves de Albuquerque H. Audouin Luigi Basset L. Berthier Raúl Andrés Bianchi P. Billy Floria Blanchet T. Bordignon Alain Bravaix S. Bruyère Michel Buczko Florian Cacho Didier Céli Pascal Chevalier 0002 S. Crémer Bogdan Cretu C. Dagon C. Deglise-Favre Mickael Denais Yvan Denis N. Derrier T. Devoivre Malick Diop C. Diouf Cheikh Diouf C. Doyen S. Dudit C. Durand B. Duriez M. Fadlallah X. FederspielXavier Federspiel Vincent Fiori O. Foissey Sébastien Fregonese Tadeu Mota Frutuoso Tidjani Garba-Seybou P. Garcia Giacomo Garegnani Xavier Garros A. Gauthier Gérard Ghibaudo F. Gianesello C. Giannakopoulos D. Gloria C. Belem Goncalves J. Azevedo Goncalves Gilles Gouget N. Guitard Joycelyn Hai G. Haury M. Hello Vincent Huard S. Jan Hervé Jaouen Jalal Jomaah D. Lachenal Joris Lacord C. A. Legrand D. Lewis S. Madassamy M. Marin V. Millon Y. Mourier F. Nallet Olivier Noblanc F. Paillardet G. Pananakakis N. Pelloux Maxime Penzes P. Perdu C. Pribat Vincent Quenette S. Ramirez-Ruiz Christine Raynaud M. L. Rellier C. Renard Nathalie Revil Yannick Rey-Tauriac G. Ribes Denis Rideau David Roy 0001 Patrick Scheer Mathieu Sicre Luca Silvestri Thomas Skotnicki F. Sonnerat Emeline Souchier Arkadiusz Szewczyk Clément Tavernier E. Vincent N. Vulliet G. Waltisperger V. Yon Thomas Zimmer