Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.

Ján Kuzmík

Ales Chvála Lukás Nagy Juraj Marek Juraj Priesol Daniel Donoval Alexander Satka Michal Blaho Dagmar Gregusová Ján Kuzmík Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs. 1940009:1-1940009:14 2019 28 J. Circuits Syst. Comput. Supplement-1 https://doi.org/10.1142/S0218126619400097 db/journals/jcsc/jcsc28.html#ChvalaNMPDSBGK19

Ales Chvála Lukás Nagy Juraj Marek Juraj Priesol Daniel Donoval Alexander Satka Michal Blaho Dagmar Gregusová Ján Kuzmík Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell. 1-6 2018 DTIS https://doi.org/10.1109/DTIS.2018.8368565 conf/dtis/2018 db/conf/dtis/dtis2018.html#ChvalaNMPDSBGK18

Andreas Graff Michél Simon-Najasek Frank Altmann Ján Kuzmík Dagmar Gregusová S. Hascik Helmut Jung T. Baur Jan Grünenpütt Hervé Blanck High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. 338-343 2017 76-77 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2017.06.031 db/journals/mr/mr76.html#GraffSAKGHJBGB17

Karol Cico Ján Kuzmík Dagmar Gregusová Roman Stoklas Tibor Lalinsky Alexandros G. Georgakilas Dionyz Pogany Karol Fröhlich Optimization and performance of Al<sub>2</sub>O<sub>3</sub>/GaN metal-oxide-semiconductor structures. 790-793 2007 47 Microelectron. Reliab. 4-5 https://doi.org/10.1016/j.microrel.2007.01.010 db/journals/mr/mr47.html#CicoKGSLGPF07

P. Javorka A. Alam Michel Marso Mike Jean Wolter Ján Kuzmík A. Fox M. Heuken Peter Kordos Material and device issues of AlGaN/GaN HEMTs on silicon substrates. 435-437 2003 34 Microelectron. J. 5-8 https://doi.org/10.1016/S0026-2692(03)00067-3 db/journals/mj/mj34.html#JavorkaAMWKFHK03

Dionyz Pogany Ján Kuzmík Juraj Darmo Martin Litzenberger Sergey Bychikhin Karl Unterrainer Z. Mozolova S. Hascik Tibor Lalinsky Erich Gornik Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. 1673-1677 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00210-X https://www.wikidata.org/entity/Q62583866 db/journals/mr/mr42.html#PoganyKDLBUMHLG02

A. Alam Frank Altmann T. Baur Michal Blaho Hervé Blanck Sergey Bychikhin Ales Chvála Karol Cico Juraj Darmo Daniel Donoval A. Fox Karol Fröhlich Alexandros G. Georgakilas Erich Gornik Andreas Graff Dagmar Gregusová Jan Grünenpütt S. Hascik M. Heuken P. Javorka Helmut Jung Peter Kordos Tibor Lalinsky Martin Litzenberger Juraj Marek Michel Marso Z. Mozolova Lukás Nagy Dionyz Pogany Juraj Priesol Alexander Satka Michél Simon-Najasek Roman Stoklas Karl Unterrainer Mike Jean Wolter