Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture.

Liviu Militaru A. Souifi M. Mouis Alain Chantre G. Brémond Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. 253-263 2001 41 Microelectron. Reliab. 2 https://doi.org/10.1016/S0026-2714(00)00097-4 db/journals/mr/mr41.html#MilitaruSMCB01