Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

Nathalie Labat N. Said Kathia Harrouche Farid Medjdoub Nathalie Labat Jean-Guy Tartarin Nathalie Malbert Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. 1-5 2023 IRPS https://doi.org/10.1109/IRPS48203.2023.10117807 conf/irps/2023 db/conf/irps/irps2023.html#SaidHMLTM23 Kalparupa Mukherjee Frédéric Darracq Arnaud Curutchet Nathalie Malbert Nathalie Labat Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. 4 2018 IRPS https://doi.org/10.1109/IRPS.2018.8353581 conf/irps/2018 db/conf/irps/irps2018.html#MukherjeeDCML18

Nathalie Labat François Marc Hélène Frémont Marise Bafleur Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. 1-5 2017 76-77 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2017.08.002 db/journals/mr/mr76.html#LabatMFB17

Kalparupa Mukherjee Frédéric Darracq Arnaud Curutchet Nathalie Malbert Nathalie Labat TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. 350-356 2017 76-77 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2017.07.049 db/journals/mr/mr76.html#MukherjeeDCML17

H. Lakhdhar Nathalie Labat Arnaud Curutchet Nicolas Defrance Marie Lesecq Jean-Claude de Jaeger Nathalie Malbert Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. 594-598 2016 64 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2016.07.026 db/journals/mr/mr64.html#LakhdharLCDLJM16

M. Rzin Nathalie Labat Nathalie Malbert Arnaud Curutchet Laurent Brunel Benoit Lambert Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. 1672-1676 2015 55 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2015.07.001 db/journals/mr/mr55.html#RzinLMCBL15

Pamela Del Vecchio Arnaud Curutchet Yannick Deshayes M. Bettiati F. Laruelle Nathalie Labat Laurent Béchou Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. 1741-1745 2015 55 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2015.06.041 db/journals/mr/mr55.html#VecchioCDBLLB15

Nathalie Labat François Marc Editorial. 1169-1170 2013 53 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2013.07.122 db/journals/mr/mr53.html#LabatM13

W. Ben Naceur Nathalie Malbert Nathalie Labat Hélène Frémont D. Carisetti J. C. Clement J. L. Muraro Barbara Bonnet Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. 1375-1380 2013 53 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2013.07.105 db/journals/mr/mr53.html#NaceurMLFCCMB13

Laurent Brunel Benoit Lambert P. Mezenge J. Bataille D. Floriot Jan Grünenpütt Hervé Blanck D. Carisetti Y. Gourdel Nathalie Malbert Arnaud Curutchet Nathalie Labat Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. 1450-1455 2013 53 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2013.07.095 db/journals/mr/mr53.html#BrunelLMBFGBCGMCL13

S. Karboyan Jean-Guy Tartarin M. Rzin Laurent Brunel Arnaud Curutchet Nathalie Malbert Nathalie Labat D. Carisetti Benoit Lambert M. Mermoux E. Romain-Latu F. Thomas C. Bouexière C. Moreau Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. 1491-1495 2013 53 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2013.07.020 db/journals/mr/mr53.html#KarboyanTRBCMLCLMRTBM13

Benoit Lambert Nathalie Labat Dominique Carisetti Serge Karboyan Jean-Guy Tartarin Jim Thorpe Laurent Brunel Arnaud Curutchet Nathalie Malbert Eddy Latu-Romain Michel Mermoux Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. 2184-2187 2012 52 Microelectron. Reliab. 9-10 https://doi.org/10.1016/j.microrel.2012.06.100 db/journals/mr/mr52.html#LambertLCKTTBCMLM12

Laurent Brunel Nathalie Malbert Arnaud Curutchet Nathalie Labat Benoit Lambert Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. 270-273 2012 ESSDERC https://doi.org/10.1109/ESSDERC.2012.6343385 conf/essderc/2012 db/conf/essderc/essderc2012.html#BrunelMCLL12

Nathalie Labat François Marc Editorial. 1423-1424 2011 51 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2011.08.006 db/journals/mr/mr51.html#LabatM11

G. A. Koné Brice Grandchamp C. Hainaut François Marc Cristell Maneux Nathalie Labat Thomas Zimmer Virginie Nodjiadjim Muriel Riet Jean Godin Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. 1730-1735 2011 51 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2011.07.073 db/journals/mr/mr51.html#KoneGHMMLZNRG11

A. Aubert Sébastien Jacques S. Pétremont Nathalie Labat Hélène Frémont Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. 1845-1849 2011 51 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2011.07.071 db/journals/mr/mr51.html#AubertJPLF11

Mustapha Faqir Mohsine Bouya Nathalie Malbert Nathalie Labat D. Carisetti Benoit Lambert Giovanni Verzellesi Fausto Fantini Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. 1520-1522 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.020 https://www.wikidata.org/entity/Q59414747 db/journals/mr/mr50.html#FaqirBMLCLVF10

G. A. Koné Brice Grandchamp C. Hainaut François Marc Cristell Maneux Nathalie Labat Thomas Zimmer Virginie Nodjiadjim Jean Godin Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. 1548-1553 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.141 db/journals/mr/mr50.html#KoneGHMMLZNG10

A. Aubert J. P. Rebrasse Lionel Dantas de Morais Nathalie Labat Hélène Frémont Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. 1688-1691 2010 50 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2010.07.036 db/journals/mr/mr50.html#AubertRMLF10

Dean Lewis Nathalie Labat Editorial. 935-936 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.07.041 db/journals/mr/mr49.html#LewisL09

Nathalie Malbert Nathalie Labat Arnaud Curutchet C. Sury V. Hoel J.-C. de Jaeger Nicolas Defrance Y. Douvry Christian Dua Mourad Oualli C. Bru-Chevallier Jean-Marie Bluet W. Chikhaoui Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. 1216-1221 2009 49 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2009.07.015 db/journals/mr/mr49.html#MalbertLCSHJDDDOBBC09

Mohsine Bouya Nathalie Malbert Nathalie Labat D. Carisetti Philippe Perdu J. C. Clement Benoit Lambert M. Bonnet Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. 1366-1369 2008 48 Microelectron. Reliab. 8-9 https://doi.org/10.1016/j.microrel.2008.07.052 db/journals/mr/mr48.html#BouyaMLCPCLB08

Nathalie Labat André Touboul Editorial. 1311-1312 2007 47 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2007.08.007 db/journals/mr/mr47.html#LabatT07

Mohsine Bouya D. Carisetti Nathalie Malbert Nathalie Labat Philippe Perdu J. C. Clement M. Bonnet G. Pataut Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. 1630-1633 2007 47 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2007.07.085 db/journals/mr/mr47.html#BouyaCMLPCBP07

Mustapha Faqir Giovanni Verzellesi Fausto Fantini Francesca Danesin Fabiana Rampazzo Gaudenzio Meneghesso Enrico Zanoni Anna Cavallini Antonio Castaldini Nathalie Labat André Touboul Christian Dua Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. 1639-1642 2007 47 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2007.07.005 https://www.wikidata.org/entity/Q59414845 db/journals/mr/mr47.html#FaqirVFDRMZCCLTD07

A. Sozza Arnaud Curutchet Christian Dua Nathalie Malbert Nathalie Labat André Touboul AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. 1725-1730 2006 46 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2006.07.062 db/journals/mr/mr46.html#SozzaCDMLT06

Nathalie Labat Editorial. 1275-1276 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.036 db/journals/mr/mr45.html#Labat05

Naoufel Ismail Nathalie Malbert Nathalie Labat André Touboul Jean-Luc Muraro F. Brasseau D. Langrez Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. 1611-1616 2005 45 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2005.07.080 db/journals/mr/mr45.html#IsmailMLTMBL05

Nathalie Labat Nathalie Malbert Cristell Maneux André Touboul Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. 1361-1368 2004 44 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2004.07.035 db/journals/mr/mr44.html#LabatMMT04

Brice Grandchamp Cristell Maneux Nathalie Labat André Touboul Thomas Zimmer On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. 1387-1392 2004 44 Microelectron. Reliab. 9-11 https://doi.org/10.1016/j.microrel.2004.07.020 db/journals/mr/mr44.html#GrandchampMLTZ04

Nathalie Labat André Touboul Editorial. 1351-1352 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00241-5 db/journals/mr/mr43.html#LabatT03

Arnaud Curutchet Nathalie Malbert Nathalie Labat André Touboul Christophe Gaquière A. Minko Michael J. Uren Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. 1713-1718 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00339-1 db/journals/mr/mr43.html#CurutchetMLTGMU03

J. C. Martin Cristell Maneux Nathalie Labat André Touboul Muriel Riet S. Blayac M. Kahn Jean Godin 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. 1725-1730 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00340-8 db/journals/mr/mr43.html#MartinMLTRBKG03

Mohamed Belhaj Cristell Maneux Nathalie Labat André Touboul Philippe Bove High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. 1731-1736 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00334-2 db/journals/mr/mr43.html#BelhajMLTB03

Nathalie Labat Nathalie Malbert Benoit Lambert André Touboul F. Garat B. Proust Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. 1575-1580 2002 42 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(02)00193-2 db/journals/mr/mr42.html#LabatMLTGP02

Benoit Lambert Nathalie Malbert Nathalie Labat Frédéric Verdier André Touboul P. Huguet R. Bonnet G. Pataut Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. 1573-1578 2001 41 Microelectron. Reliab. 9-10 db/journals/mr/mr41.html#LambertMLVTHBP01 https://doi.org/10.1016/S0026-2714(01)00186-X https://www.wikidata.org/entity/Q127110139

A. Aubert Marise Bafleur J. Bataille Laurent Béchou Mohamed Belhaj M. Bettiati Hervé Blanck S. Blayac Jean-Marie Bluet Barbara Bonnet M. Bonnet R. Bonnet C. Bouexière Mohsine Bouya Philippe Bove F. Brasseau C. Bru-Chevallier Laurent Brunel D. Carisetti Dominique Carisetti Antonio Castaldini Anna Cavallini W. Chikhaoui J. C. Clement Arnaud Curutchet Francesca Danesin Frédéric Darracq Nicolas Defrance Yannick Deshayes Y. Douvry Christian Dua Fausto Fantini Mustapha Faqir D. Floriot Hélène Frémont Christophe Gaquière F. Garat Jean Godin Y. Gourdel Brice Grandchamp Jan Grünenpütt C. Hainaut Kathia Harrouche V. Hoel P. Huguet Naoufel Ismail Sébastien Jacques Jean-Claude de JaegerJ.-C. de Jaeger M. Kahn S. Karboyan Serge Karboyan Gilles Amadou KonéG. A. Koné H. Lakhdhar Benoit Lambert D. Langrez F. Laruelle E. Latu-RomainE. Romain-Latu Eddy Latu-Romain Marie Lesecq Dean Lewis Nathalie Malbert Cristell Maneux François Marc J. C. Martin Farid Medjdoub Gaudenzio Meneghesso M. Mermoux Michel Mermoux P. Mezenge A. Minko Lionel Dantas de Morais C. Moreau Kalparupa Mukherjee J. L. Muraro Jean-Luc Muraro W. Ben Naceur Virginie Nodjiadjim Mourad Oualli G. Pataut Philippe Perdu S. Pétremont B. Proust Fabiana Rampazzo J. P. Rebrasse Muriel Riet M. Rzin N. Said A. Sozza C. Sury Jean-Guy Tartarin F. Thomas Jim Thorpe André Touboul Michael J. Uren Pamela Del Vecchio Frédéric Verdier Giovanni Verzellesi Enrico Zanoni Thomas Zimmer