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The W\/TiO2\/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (RHRS\/RLRS) of about two orders of magnitude. The conduction behaviors of the W\/TiO2\/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the RHRS\/RLRS of the W\/TiO2\/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W\/TiO2 Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W\/TiO2 interface is suggested to be responsible for the resistive switching characteristics of the W\/TiO2\/FTO memory device. This work demonstrates the potential applications of the rutile TiO2 nanowire-based W\/TiO2\/FTO memory device for high-density data storage in nonvolatile memory devices.<\/jats:p>","DOI":"10.3390\/s23073480","type":"journal-article","created":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T03:01:14Z","timestamp":1679886074000},"page":"3480","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W\/TiO2\/FTO Memory Device"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1266-8609","authenticated-orcid":false,"given":"Zhiqiang","family":"Yu","sequence":"first","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"},{"name":"Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China"}]},{"given":"Xu","family":"Han","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"given":"Jiamin","family":"Xu","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"given":"Cheng","family":"Chen","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"given":"Xinru","family":"Qu","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"given":"Baosheng","family":"Liu","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"given":"Zijun","family":"Sun","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9971-3793","authenticated-orcid":false,"given":"Tangyou","family":"Sun","sequence":"additional","affiliation":[{"name":"Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China"}]}],"member":"1968","published-online":{"date-parts":[[2023,3,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1109\/TCT.1971.1083337","article-title":"Memristor-The missing circuit element","volume":"18","author":"Chua","year":"1971","journal-title":"IEEE Trans. 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