{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,12]],"date-time":"2026-02-12T17:49:01Z","timestamp":1770918541303,"version":"3.50.1"},"reference-count":32,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2022,5,20]],"date-time":"2022-05-20T00:00:00Z","timestamp":1653004800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key R&amp;D Program of China","doi-asserted-by":"publisher","award":["2021YFB2012601"],"award-info":[{"award-number":["2021YFB2012601"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key R&amp;D Program of China","doi-asserted-by":"publisher","award":["12174036"],"award-info":[{"award-number":["12174036"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"NNSF of China","doi-asserted-by":"publisher","award":["2021YFB2012601"],"award-info":[{"award-number":["2021YFB2012601"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"NNSF of China","doi-asserted-by":"publisher","award":["12174036"],"award-info":[{"award-number":["12174036"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si\/SiO2 interface states. In this paper, a coplanar avalanche photodiode (APD) was developed with a virtual guard ring design. When working in Geiger mode, it exhibited a strong UV response. The responsivity of 4 \u00d7 103 A\/W (corresponding to a gain of 8 \u00d7 106) at 261 nm is measured under the incident power of 0.6 \u03bcW with an excess bias of 1.5 V. To the best of our knowledge, the maximum 3-dB bandwidth of 1.4 GHz is the first report ever for a Si APD when working in the Geiger mode in spite of the absence of an integrated CMOS read-out circuit.<\/jats:p>","DOI":"10.3390\/s22103873","type":"journal-article","created":{"date-parts":[[2022,5,20]],"date-time":"2022-05-20T00:18:11Z","timestamp":1653005891000},"page":"3873","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility"],"prefix":"10.3390","volume":"22","author":[{"given":"Qiaoli","family":"Liu","sequence":"first","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Li","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Yuxin","family":"Jin","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Shifeng","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Yitong","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Anqi","family":"Hu","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]},{"given":"Xia","family":"Guo","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China"}]}],"member":"1968","published-online":{"date-parts":[[2022,5,20]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"B48","DOI":"10.1364\/PRJ.7.000B48","article-title":"Magnesium ion-implantation-based gallium nitride pin photodiode for visible-blind ultraviolet detection","volume":"7","author":"Xu","year":"2019","journal-title":"Photonics Res."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1038\/s41377-021-00527-4","article-title":"Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays","volume":"10","author":"Cai","year":"2021","journal-title":"Light Sci. 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