{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,19]],"date-time":"2026-04-19T06:04:22Z","timestamp":1776578662194,"version":"3.51.2"},"reference-count":0,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":18,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2000,1]]},"abstract":"<jats:p>A new analytical model for carrier mobility in silicon is presented, which is strongly\noriented to CAD and suitable for implementation in device simulators. The effects of\nthe electric field, temperature, and doping concentration are accounted for. In particular,\nthe model unifies the descriptions of majority\u2010 and minority\u2010carrier mobility and\nincludes the full temperature dependence. The effects of a high longitudinal field are\nincluded in the conventional velocity\u2010saturation form; the doping dependence is also\nincorporated in the latter. The model has been worked out starting from a preliminary\ninvestigation using a Boltzmann solver, and has been validated by a number of comparisons\nwith published experiments on silicon.<\/jats:p>","DOI":"10.1155\/2000\/52147","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:37Z","timestamp":1190120317000},"page":"467-483","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":41,"title":["An Analytical, Temperature\u2010dependent Modelfor Majority\u2010 and Minority\u2010carrier Mobilityin Silicon Devices"],"prefix":"10.1155","volume":"10","author":[{"given":"Susanna","family":"Reggiani","sequence":"first","affiliation":[]},{"given":"Marina","family":"Valdinoci","sequence":"additional","affiliation":[]},{"given":"Luigi","family":"Colalongo","sequence":"additional","affiliation":[]},{"given":"Massimo","family":"Rudan","sequence":"additional","affiliation":[]},{"given":"Giorgio","family":"Baccarani","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[1999,12,14]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2000\/052147.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2000\/52147","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T13:21:39Z","timestamp":1723123299000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2000\/52147"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1999,12,14]]},"references-count":0,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2000,1]]}},"alternative-id":["10.1155\/2000\/52147"],"URL":"https:\/\/doi.org\/10.1155\/2000\/52147","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"value":"1065-514X","type":"print"},{"value":"1563-5171","type":"electronic"}],"subject":[],"published":{"date-parts":[[1999,12,14]]},"assertion":[{"value":"1998-12-16","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"1999-12-14","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"1999-12-14","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}