{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T07:21:53Z","timestamp":1725434513580},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,9]]},"DOI":"10.1109\/essderc.2013.6818826","type":"proceedings-article","created":{"date-parts":[[2014,5,30]],"date-time":"2014-05-30T18:34:21Z","timestamp":1401474861000},"page":"91-94","source":"Crossref","is-referenced-by-count":2,"title":["Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)"],"prefix":"10.1109","author":[{"given":"S.","family":"Reggiani","sequence":"first","affiliation":[]},{"given":"E.","family":"Gnani","sequence":"additional","affiliation":[]},{"given":"A.","family":"Gnudi","sequence":"additional","affiliation":[]},{"given":"G.","family":"Baccarani","sequence":"additional","affiliation":[]},{"given":"S.","family":"Poli","sequence":"additional","affiliation":[]},{"given":"R.","family":"Wise","sequence":"additional","affiliation":[]},{"given":"M. Y.","family":"Chuang","sequence":"additional","affiliation":[]},{"given":"W.","family":"Tian","sequence":"additional","affiliation":[]},{"given":"M.","family":"Denison","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558868"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2227321"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1063\/1.1318369"},{"key":"13","first-page":"61","article-title":"Towards a Universal Model for hot Carrier Degradation in DMOS Transistors","author":"moens","year":"0","journal-title":"Proc Int Symp Power Semicond Devices ICs 2010"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2160023"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2030836"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2011.5890813"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2009.2025770"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2001969"},{"journal-title":"Sentaurus Device Simulator (Release D-2010 03)","year":"2010","key":"10"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2006.882212"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.904587"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21472"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2135835"},{"key":"4","article-title":"Investigation on the temperature dependence of the HCI effects in the rugged STI based LDMOS transistor","author":"poli","year":"0","journal-title":"Proc ISPSD 2010"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2010.07.030"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/IRWS.2009.5383027"}],"event":{"name":"ESSDERC 2013 - 43rd European Solid State Device Research Conference","start":{"date-parts":[[2013,9,16]]},"location":"Bucharest, Romania","end":{"date-parts":[[2013,9,20]]}},"container-title":["2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6811819\/6818804\/06818826.pdf?arnumber=6818826","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,23]],"date-time":"2017-03-23T18:11:08Z","timestamp":1490292668000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6818826\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/essderc.2013.6818826","relation":{},"subject":[],"published":{"date-parts":[[2013,9]]}}}