{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T11:05:20Z","timestamp":1767611120771,"version":"3.40.5"},"reference-count":35,"publisher":"Wiley","issue":"10","license":[{"start":{"date-parts":[[2022,6,24]],"date-time":"2022-06-24T00:00:00Z","timestamp":1656028800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2022,10]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>High\u2010efficiency and high\u2010linearity three\u2010stage transformer\u2010coupled power amplifier (PA) and power combiner for millimeter\u2010wave applications using 130\u2009nm CMOS technology are presented in the paper. The suggested PA uses transformer coupled for input, inter\u2010stage, and output matching networks where the inter\u2010stage matching inductors are utilized to enhance the RF performance. The proposed power amplifier is composed of three stages: first, driver, and power stages. The first stage operates in a class\u2010C to improve the efficiency and decrease power dissipated while a class\u2010AB is used in the driver and power stages to maximize the output power. The proposed PA and power combiner designs are suitable for mm\u2010wave 5G applications. The coupling transformers, inter\u2010stage matching inductors, and output combiner are analyzed and designed using Ansoft high\u2010frequency structure simulator (HFSS) and achieve high\u2010quality factor and high\u2010coupling coefficient over the frequency range from 26 to 33\u2009GHz. The proposed three\u2010stage transformer\u2010coupled power amplifier covers a frequency band from 26\u2009GHz to 33\u2009GHz with a saturated output power of 13.1\u2009dBm, a peak power added efficiency (PAE) equals 19.1%, and a maximum power gain of 13.25\u2009dB. Whereas the proposed power combiner has a saturated output power of 16.3\u00a0dBm, a maximum PAE equals 20.5% and a peak gain of 16.5\u00a0dB. The proposed three\u2010stage transformer\u2010coupled PA and power combiner consume low power of 65\u2009mW and 128\u2009mW, respectively. Moreover, the adjacent channel power ratios (ACPR) of the proposed PA and power combiner equal \u221230 dBc and \u221236 dBc, respectively, for 20\u2009MHz channel bandwidth. Finally, the active areas of the proposed power amplifier and power combiner equal 0.25\u2009mm<jats:sup>2<\/jats:sup> and 0.69\u2009mm<jats:sup>2<\/jats:sup>, respectively, while the chip areas are 0.55\u2009mm<jats:sup>2<\/jats:sup> and 1\u2009mm<jats:sup>2<\/jats:sup>, respectively.<\/jats:p>","DOI":"10.1002\/cta.3363","type":"journal-article","created":{"date-parts":[[2022,6,25]],"date-time":"2022-06-25T04:21:27Z","timestamp":1656130887000},"page":"3567-3583","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Three\u2010stage transformer\u2010coupled CMOS power amplifier for millimeter\u2010wave applications using 130\u2009nm CMOS technology"],"prefix":"10.1002","volume":"50","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8501-1101","authenticated-orcid":false,"given":"Marwa","family":"Mansour","sequence":"first","affiliation":[{"name":"Microelectronics Department Electronics Research Institute (ERI)  Cairo Egypt"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0555-7142","authenticated-orcid":false,"given":"Islam","family":"Mansour","sequence":"additional","affiliation":[{"name":"Electrical Engineering Department, Shoubra Faculty of Engineering Benha University  Cairo Egypt"}]}],"member":"311","published-online":{"date-parts":[[2022,6,24]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/MCOM.2014.6736750"},{"key":"e_1_2_9_3_1","first-page":"128","article-title":"A 28 GHz 32\u2010element phased\u2010array transceiver IC with concurrent dual polarized beams and 1.4 degree beam\u2010steering resolution for 5G communication","author":"Sadhu B","year":"2017","journal-title":"IEEE Int Solid\u2010State Circuits Conf (ISSCC) Dig Tech. Papers"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2623706"},{"key":"e_1_2_9_5_1","first-page":"1177","article-title":"Reconfigurable high efficiency power amplifier with tunable coupling coefficient based transformer for 5G applications","author":"Ali NS","year":"2017","journal-title":"IEEE MTT\u2010S Int Microw Symp Dig"},{"key":"e_1_2_9_6_1","unstructured":"https:\/\/apps.fcc.gov\/edocs_public\/attachmatch\/FCC-16-89A1.pdf"},{"key":"e_1_2_9_7_1","unstructured":"Spectrum for 4G and 5G Qualcomm Dec.2017."},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2902307"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2008.2008591"},{"key":"e_1_2_9_10_1","doi-asserted-by":"crossref","unstructured":"ChenC XuX YangX et al.A 20\u201030 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130\u2010nm SiGe BiCMOS. Paper presented at: IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Phoenix USA;2017:88\u201090.","DOI":"10.1109\/SIRF.2017.7874379"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2008.925099"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2013.2284778"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1002\/mop.31762"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2769053"},{"key":"e_1_2_9_15_1","doi-asserted-by":"crossref","unstructured":"YuC FengJ ZhaoD.A Ka\u2010band 65\u2010nm CMOS neutralized medium power amplifier for 5G phased\u2010array applications. Paper presented at: IEEE MTT\u2010S International Wireless Symposium (IWS) Chengdu China;2018.","DOI":"10.1109\/IEEE-IWS.2018.8400842"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2641459"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2018.2871047"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2584639"},{"key":"e_1_2_9_19_1","first-page":"196","article-title":"A broadband distributed amplifier with internal feedback providing 660\u2010GHz GBW in 90\u2010nm CMOS","author":"Arbabian A","year":"2008","journal-title":"IEEE Int Solid\u2010State Circuits Conf Tech Dig"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2409295"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2021.3080831"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2021.3080710"},{"key":"e_1_2_9_23_1","first-page":"1","article-title":"Fully integrated pseudo differential K\u2010band power amplifier in 0.13um standard CMOS","author":"Chen P","year":"2016","journal-title":"2016 International Symposium on Integrated Circuits (ISIC)"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1002\/mop.32590"},{"key":"e_1_2_9_25_1","first-page":"1","article-title":"Millimeter wave transformer coupled low\u2010power and broadband power amplifiers","author":"Chen B","year":"2016","journal-title":"2016 International Symposium on Integrated Circuits (ISIC)"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2922507"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2253334"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2028752"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2020.104830"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2021.105251"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.894325"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2012.2187536"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2013.2261087"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2021.105006"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED51717.2021.9424284"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1007\/s00034\u2010020\u201001525\u20104"}],"container-title":["International Journal of Circuit Theory and Applications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/cta.3363","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/cta.3363","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/cta.3363","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,21]],"date-time":"2023-08-21T21:58:13Z","timestamp":1692655093000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/cta.3363"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,24]]},"references-count":35,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2022,10]]}},"alternative-id":["10.1002\/cta.3363"],"URL":"https:\/\/doi.org\/10.1002\/cta.3363","archive":["Portico"],"relation":{},"ISSN":["0098-9886","1097-007X"],"issn-type":[{"type":"print","value":"0098-9886"},{"type":"electronic","value":"1097-007X"}],"subject":[],"published":{"date-parts":[[2022,6,24]]},"assertion":[{"value":"2022-03-06","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-06-09","order":1,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-06-24","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}