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To extend the linear region of the output voltage, correct the sensitivity degradation, and improve the imager dynamic range, an output regulated voltage follower is proposed. All these enhancements are achieved without decreasing the pixel fill factor nor increasing the number of transistors and the addressing circuits complexity of a conventional 4T CMOS APS. The performance of the circuit is assessed using a 0.35\u2010\u03bcm CMOS technology. The obtained results show a 14\u2010dB dynamic range improvement for highly linear applications over the conventional APS readout circuit.<\/jats:p>","DOI":"10.1002\/cta.2425","type":"journal-article","created":{"date-parts":[[2017,11,9]],"date-time":"2017-11-09T02:12:53Z","timestamp":1510193573000},"page":"1580-1592","source":"Crossref","is-referenced-by-count":8,"title":["A 99.95% linearity readout circuit with 72\u00a0dB dynamic range for active pixel sensors"],"prefix":"10.1002","volume":"46","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5896-6973","authenticated-orcid":false,"given":"Leonardo Bruno","family":"de S\u00e1","sequence":"first","affiliation":[{"name":"Brazilian Army Technological Center (CTEx) Av. das Am\u00e9ricas, 28705 Rio de Janeiro RJ 23020\u2010470 Brazil"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5545-251X","authenticated-orcid":false,"given":"Mauricio Henrique Costa","family":"Dias","sequence":"additional","affiliation":[{"name":"Instituto Militar de Engenharia Rio de Janeiro RJ Brazil"}]},{"given":"Antoine","family":"Dupret","sequence":"additional","affiliation":[{"name":"CEA\u2010LETI, DACLE Grenoble 91400 France"}]},{"given":"Antonio Carneiro","family":"de Mesquita Filho","sequence":"additional","affiliation":[{"name":"Universidade Federal do Rio de Janeiro Rio de Janeiro RJ Brazil"}]}],"member":"311","published-online":{"date-parts":[[2017,11,8]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/MCD.2005.1438751"},{"key":"e_1_2_8_3_1","doi-asserted-by":"crossref","unstructured":"Martin\u2010GonthierP MagnanP Corbi\u00e8reF EstribeauM HugerN BoucherL. \u201cDynamic range optimisation of CMOS image sensors dedicated to space applications \u201d in Proc. of SPIE 2007 vol. 6744 67440U1\u201311.","DOI":"10.1117\/12.747548"},{"volume-title":"A Comparison of High Dynamic Range CIS Technologies for Automotive Applications","year":"2013","author":"Solhusvik J","key":"e_1_2_8_4_1"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1117\/1.JEI.23.1.013021"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.859698"},{"key":"e_1_2_8_7_1","doi-asserted-by":"crossref","unstructured":"ZarnowskiJ PaceM JoynerM. \u201c1.5 FET per pixel standard CMOS active column sensor \u201d in Proc. of SPIE 1999 vol. 3649 pp.186\u2013196.","DOI":"10.1117\/12.347074"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/4.735552"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2006735"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.869785"},{"key":"e_1_2_8_11_1","doi-asserted-by":"crossref","unstructured":"JoS BaeM ChoiB KimJ ShinJ. \u201cWide dynamic range and high\u2010sensitivity CMOS active pixel sensor using output voltage feedback structure \u201d Proc. of SPIE 9100 910011 2014.","DOI":"10.1117\/12.2065331"},{"key":"e_1_2_8_12_1","doi-asserted-by":"crossref","unstructured":"XuC ZhangW ChanM. \u201cA 1.0 V VDD CMOS active pixel image sensor with complementary pixel architecture fabricated with a 0.25\u00a0\u03bcm CMOS process \u201d in Proc. 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